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17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Configuration | Technology | Transistor Polarity | Gain Bandwidth Product fT | Channel Mode | Rise Time | Fall Time | Transistor Type | Product Type | Package | Subcategory | Product Category | Installation style | Factory packaging quantity | Factory Pack Quantity | RoHS | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | Collector - base voltage VCBO | Emitter - base voltage VEBO | Collector continuous current | DC Collector / Base Gain hfe Min | DC current gain hFE maximum | |
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13,155
In-stock
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Toshiba Semiconductor | Silicon PNP Power Transistors | Tube | TO-220 | 50 | Green available | |||||||||||||||||||||||||||||||||||
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8,889
In-stock
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Toshiba Semiconductor | TRANSISTOR 6 A, 80 V, NPN, Si, POWER TRANSISTOR, ... | Box | TO-220 | 50 | Green available | |||||||||||||||||||||||||||||||||||
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15,335
In-stock
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Toshiba Semiconductor | TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, R... | Box | TO-92 | 100% Green available | ||||||||||||||||||||||||||||||||||||
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11,656
In-stock
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Toshiba Semiconductor | Transistor | Tube | TO-220 | 50 | Green available | |||||||||||||||||||||||||||||||||||
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8,665
In-stock
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Toshiba Semiconductor | TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER,... | Tape & Reel (TR) | TO-263 | 1000 | Green available | |||||||||||||||||||||||||||||||||||
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15,335
In-stock
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Toshiba Semiconductor | Bipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHAS... | Box | TO-92 | Transistors | Bipolar Transistors - BJT | |||||||||||||||||||||||||||||||||||
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15,662
In-stock
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Toshiba Semiconductor | Bipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHAS... | BJTs - Bipolar Transistors | Transistors | Bipolar Transistors - BJT | ||||||||||||||||||||||||||||||||||||
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25,544
In-stock
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Toshiba Semiconductor | Bipolar Transistors - BJT | TO-220 | Transistors | 100 | Green available | |||||||||||||||||||||||||||||||||||
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12,255
In-stock
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Toshiba Semiconductor | Bipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHAS... | BJTs - Bipolar Transistors | Transistors | Bipolar Transistors - BJT | ||||||||||||||||||||||||||||||||||||
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7,850
In-stock
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Toshiba Semiconductor | Bipolar Transistors - Bipolar Junction Transistors (BJT) Pb-FF TO12... | Single | NPN | 200 MHz | Tube | Bipolar Transistor - Bipolar Junction Transistor (BJT) | Through Hole | 600 | 5 W | 150 V | 5 V | 50 mA | 80 | 240 | ||||||||||||||||||||||||||
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7,800
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB... | 20 V | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | 10 mm | 4.5 mm | 15 mm | Single | Si | N-Channel | Enhancement | 15 ns | 15 ns | Reel | Through Hole | 200 V | 5 A | 800 mOhms | 25 W | 67 ns | 41 ns | |||||||||||||||||
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7,881
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT... | 1 Channel | Single | Si | N-Channel | |||||||||||||||||||||||||||||||||||
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42,211
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT... | 1 Channel | Single | Si | N-Channel | MOSFETs | ||||||||||||||||||||||||||||||||||
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13,555
In-stock
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Toshiba Semiconductor | Silicon N Channel MOS Type (π−MOSV) | 30 V | - 55 C | + 150 C | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | Enhancement | 45 ns | 65 ns | Through Hole | 600 V | 12 A | 650 mOhms | 150 W | 150 ns | 35 ns | |||||||||||||||||||
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23,356
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | - 55 C | + 150 C | 1 Channel | 10.16 mm | 4.45 mm | 15.1 mm | Single | Si | N-Channel | Enhancement | 15 ns | 15 ns | 1 N-Channel | Reel | Through Hole | 600 V | 3.5 A | 2.2 Ohms | 35 W | 8 ns | 2 ns | |||||||||||||||||
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14,555
In-stock
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Toshiba Semiconductor | Silicon N Channel MOS Type (π−MOSV) | 30 V | - 55 C | + 150 C | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | Enhancement | 50 ns | 60 ns | Through Hole | 600 V | 16 A | 400 mOhms | 150 W | 155 ns | 35 ns | |||||||||||||||||||
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GET PRICE |
7,500
In-stock
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Toshiba Semiconductor | Silicon N Channel MOS Type (π−MOSV) | 30 V | - 55 C | + 150 C | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | Enhancement | 30 ns | 50 ns | Through Hole | 500 V | 20 A | 270 mOhms | 150 W | 71 ns | 23 ns |