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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||
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3,000
In-stock
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Infineon Technologies | MOSFET P-CH 30V 5.8A 6TSOP | SOT-23-6 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-TSOP | 0 | 3000 | P-Channel | - | 30V | 5.8A (Ta) | 40 mOhm @ 5.8A, 10V | 2.4V @ 25µA | 12nC @ 10V | 595pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||
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12,000
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 5.8A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 537000 | 3000 | N-Channel | - | 30V | 5.8A (Ta) | 38 mOhm @ 5.8A, 10V | 2.2V @ 250µA | - | 424pF @ 5V | 4.5V, 10V | ±20V | 700mW (Ta) | |||
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33,000
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 5.8A SOT23 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | 0 | 3000 | N-Channel | - | 30V | 5.8A (Ta) | 26.5 mOhm @ 5.8A, 10V | 1.4V @ 250µA | 20nC @ 10V | 860pF @ 15V | 2.5V, 10V | ±12V | 720mW (Ta) | |||
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1,089,000
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 5.8A SOT-23 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | N-Channel | - | 30V | 5.8A (Ta) | 28 mOhm @ 5.8A, 10V | 2V @ 250µA | 9.2nC @ 10V | 386pF @ 15V | 3V, 10V | ±20V | 720mW (Ta) |
