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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 40V 74A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 400 | P-Channel | - | 40V | 56A (Ta) | 16 mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | 7676pF @ 25V | 4.5V, 10V | ±20V | 143W (Tc) | ||||
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780
In-stock
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Infineon Technologies | MOSFET N-CH 120V 56A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | 107W (Tc) | ||||
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6,000
In-stock
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Infineon Technologies | MOSFET N-CH 120V 56A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 120V | 56A (Ta) | 14.4 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | 107W (Tc) |