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Supplier Device Package :
Minimum Quantity :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
STW20NM60FD
Per Unit
$4.218
RFQ
7,521
In-stock
STMicroelectronics MOSFET N-CH 600V 20A TO-247 TO-247-3 FDmesh™ Tube MOSFET (Metal Oxide) Through Hole -65°C ~ 150°C (TJ) Active TO-247-3 0 600 N-Channel - 600V 20A (Tc) 290 mOhm @ 10A, 10V 5V @ 250µA 37nC @ 10V 1300pF @ 25V 10V ±30V 214W (Tc)
STW20NM60
1+
$2.500
10+
$1.800
100+
$1.450
250+
$1.200
RFQ
86,500
In-stock
STMicroelectronics MOSFET N-CH 600V 20A TO-247 TO-247-3 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247-3 0 1 N-Channel - 600V 20A (Tc) 290 mOhm @ 10A, 10V 5V @ 250µA 54nC @ 10V 1500pF @ 25V 10V ±30V 192W (Tc)
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Per Unit
$6.470
VIEW
RFQ
STMicroelectronics MOSFET N-CH 600V 20A TO-220 TO-220-3 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-220AB 0 1 N-Channel - 600V 20A (Tc) 290 mOhm @ 10A, 10V 5V @ 250µA 54nC @ 10V 1500pF @ 25V 10V ±30V 192W (Tc)
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