- Package / Case :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 40V 74A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 400 | P-Channel | - | 40V | 56A (Ta) | 16 mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | 7676pF @ 25V | 4.5V, 10V | ±20V | 143W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 5.3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 570 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 30V | 5.3A | 50 mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 5.3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 30V | 5.3A | 50 mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V |
