- Package / Case :
-
- 8-PowerTDFN (3)
- 8-PowerWDFN (1)
- TO-220-3 (3)
- TO-251-3 Short Leads, IPak, TO-251AA (1)
- TO-251-3 Stub Leads, IPak (1)
- TO-252-3, DPak (2 Leads + Tab), SC-63 (9)
- TO-262-3 Long Leads, I²Pak, TO-262AA (1)
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (4)
- TO-263-4, D²Pak (3 Leads + Tab), TO-263AA (1)
- TO-3P-3, SC-65-3 (1)
- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 69A TO251-3-11 | TO-251-3 Stub Leads, IPak | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1500 | N-Channel | 100V | 69A (Tc) | 11.8 mOhm @ 69A, 10V | 2.4V @ 83µA | 58nC @ 10V | 5600pF @ 50V | 4.5V, 10V | ±20V | 125W (Tc) | |||
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GET PRICE |
8,755
In-stock
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Toshiba | MOSFET N-CH 900V 8A TO-3PN | TO-3P-3, SC-65-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-3P(N)IS | 0 | 50 | N-Channel | 900V | 8A (Ta) | 1.4 Ohm @ 4A, 10V | 4V @ 1mA | 58nC @ 10V | 2040pF @ 25V | 10V | ±30V | 85W (Tc) | ||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 1 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | P-Channel | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 3.8W (Ta), 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 2000 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | P-Channel | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 3.8W (Ta), 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 14A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | P-Channel | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 3.8W (Ta), 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | P-Channel | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 3.8W (Ta), 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 3000 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 1600 | P-Channel | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 3.8W (Ta), 79W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 60V 38A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | 60V | 38A (Tc) | 28 mOhm @ 19A, 10V | 4V @ 250µA | 58nC @ 10V | 980pF @ 25V | 10V | ±20V | 80W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 60V 38A D2PAK | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | 60V | 38A (Tc) | 28 mOhm @ 19A, 10V | 4V @ 250µA | 58nC @ 10V | 980pF @ 25V | 10V | ±20V | 80W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 100A 8TDSON | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | 80V | 100A (Tc) | 3.7 mOhm @ 50A, 10V | 3.8V @ 72µA | 58nC @ 10V | 4200pF @ 40V | 6V, 10V | ±20V | 2.5W (Ta), 114W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 3000 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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368
In-stock
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Infineon Technologies | MOSFET N-CH 100V 69A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | 100V | 69A (Tc) | 12 mOhm @ 69A, 10V | 2.4V @ 83µA | 58nC @ 10V | 5600pF @ 50V | 4.5V, 10V | ±20V | 125W (Tc) | |||
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1,674
In-stock
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Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D-PAK | 0 | 1 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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5,000
In-stock
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Infineon Technologies | MOSFET P-CH 30V 14.9A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | P-Channel | 30V | 14.9A (Ta), 78.6A (Tc) | 8.4 mOhm @ 50A, 10V | 3.1V @ 105µA | 58nC @ 10V | 4785pF @ 15V | 6V, 10V | ±25V | 2.5W (Ta), 69W (Tc) | |||
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4,750
In-stock
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Texas instruments | MOSFET N-CH 60V 23A 8VSON | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSONP (5x6) | 0 | 250 | N-Channel | 60V | 100A (Ta) | 3.2 mOhm @ 25A, 10V | 2.2V @ 250µA | 58nC @ 10V | 5070pF @ 30V | 4.5V, 10V | ±20V | 3.2W (Ta), 156W (Tc) | |||
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1,294
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 79W (Tc) | |||
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2,500
In-stock
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STMicroelectronics | MOSFET N-CH 60V 28A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | 60V | 28A (Tc) | 28 mOhm @ 15A, 10V | 4V @ 250µA | 58nC @ 10V | 1750pF @ 25V | 10V | ±20V | 70W (Tc) | |||
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10,000
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 9.8A POWERDI3333 | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | 0 | 2000 | P-Channel | 30V | 9.8A (Ta) | 11 mOhm @ 12A, 20V | 3V @ 250µA | 58nC @ 10V | 2987pF @ 15V | 4.5V, 20V | ±25V | 940mW (Ta) |
