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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 60V 5.1A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | IPAK (TO-251) | 0 | 75 | P-Channel | - | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | 2.5W (Ta), 25W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 60V 5.1A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | D-PAK | 0 | 75 | P-Channel | - | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | 2.5W (Ta), 25W (Tc) | |||||
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21,000
In-stock
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onsemi | MOSFET P-CH 150V 3A MLP 3.3SQ | 8-PowerWDFN | QFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-MLP (3.3x3.3) | 0 | 3000 | P-Channel | - | 150V | 3A (Tc) | 1.5 Ohm @ 1.5A, 10V | 5V @ 250µA | 9nC @ 10V | 270pF @ 25V | 10V | ±30V | 42W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 3.6A PQFN | 6-VDFN Exposed Pad | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | 2 N-Channel (Dual) | 1.5W | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V | ||||||||
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VIEW | onsemi | MOSFET 2N-CH 80V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | UltraFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 2500 | 2 N-Channel (Dual) | 2.5W | Logic Level Gate | 80V | - | 200 mOhm @ 2.5A, 10V | 3V @ 250µA | 10nC @ 10V | 270pF @ 25V | ||||||||
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VIEW | Diodes Incorporated | MOSFET 2P-CH 30V 8MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-MSOP | 0 | 4000 | 2 P-Channel (Dual) | 1.04W | Logic Level Gate | 30V | - | 185 mOhm @ 1.2A, 10V | 1V @ 250µA (Min) | 7nC @ 10V | 270pF @ 25V | ||||||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 2P-CH 30V 8-MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Last Time Buy | 8-MSOP | 2000 | 1000 | 2 P-Channel (Dual) | 1.04W | Logic Level Gate | 30V | - | 185 mOhm @ 1.2A, 10V | 1V @ 250µA (Min) | 7nC @ 10V | 270pF @ 25V | ||||||||
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16,000
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 3.6A PQFN | 6-VDFN Exposed Pad | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | 2 N-Channel (Dual) | 1.5W | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V |