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19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 4000 | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 2000 | N-Channel | - | 100V | 1.7A (Ta) | 310 mOhm @ 1.7A, 5V | 2V @ 1mA | - | 520pF @ 25V | 5V | ±14V | 1.8W (Ta) | ||||
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800,000
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | - | 100V | 1.7A (Ta) | 310 mOhm @ 1.7A, 5V | 2V @ 1mA | - | 520pF @ 25V | 5V | ±14V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1 | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 3.6A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 4000 | P-Channel | - | 30V | 3.6A (Ta) | 90 mOhm @ 2.4A, 10V | 1V @ 250µA | 30nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 3.6A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro8™ | 0 | 4000 | P-Channel | - | 30V | 3.6A (Ta) | 90 mOhm @ 2.4A, 10V | 1V @ 250µA | 30nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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4,629
In-stock
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onsemi | MOSFET N-CH 100V 10A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 110880 | 1 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 5A, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 40W (Tc) | ||||
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2,500
In-stock
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onsemi | MOSFET N-CH 100V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2500 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 5A, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 40W (Tc) | ||||
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10,000
In-stock
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onsemi | MOSFET N-CH 1000V 1.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2500 | N-Channel | - | 1000V | 1.6A (Tc) | 9 Ohm @ 800mA, 10V | 5V @ 250µA | 15.5nC @ 10V | 520pF @ 25V | 10V | ±30V | 2.5W (Ta), 50W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 5.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N and P-Channel | 2.5W | Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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GET PRICE |
7,210
In-stock
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Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N and P-Channel | 2.5W | Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | ||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | N and P-Channel | 2.5W | Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N and P-Channel | 2.5W | Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N and P-Channel | 2.5W | Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 5.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N and P-Channel | 2.5W | Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N and P-Channel | 2.5W | Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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1,650
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | ||||||||
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16,000
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V |
