Build a global manufacturer and supplier trusted trading platform.
Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
11 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 61A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 500 N-Channel - 30V 61A (Tc) 7 mOhm @ 37A, 10V 1V @ 250µA 110nC @ 4.5V 3500pF @ 25V 4.5V, 10V ±16V 47W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 61A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 50 N-Channel - 30V 61A (Tc) 7 mOhm @ 37A, 10V 1V @ 250µA 110nC @ 4.5V 3500pF @ 25V 4.5V, 10V ±16V 47W (Tc)
Default Photo
Per Unit
$1.914
VIEW
RFQ
Infineon Technologies MOSFET P-CH 55V 74A TO-262 TO-262 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-262 0 1000 P-Channel - 55V 42A (Tc) 20 mOhm @ 42A, 10V 4V @ 250µA 180nC @ 10V 3500pF @ 25V 10V ±20V 200W (Tc)
Default Photo
Per Unit
$1.386
VIEW
RFQ
Infineon Technologies MOSFET P-CH 55V 42A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D2PAK 0 800 P-Channel - 55V 42A (Tc) 20 mOhm @ 42A, 10V 4V @ 250µA 180nC @ 10V 3500pF @ 25V 10V ±20V 170W (Tc)
Default Photo
Per Unit
$6.080
VIEW
RFQ
STMicroelectronics MOSFET N-CH 900V 11A TO-247 TO-247-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 900V 11A (Tc) 880 mOhm @ 5.5A, 10V 4.5V @ 100µA 152nC @ 10V 3500pF @ 25V 10V ±30V 230W (Tc)
Default Photo
Per Unit
$2.600
RFQ
11,348
In-stock
Infineon Technologies MOSFET P-CH 55V 42A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) D2PAK 0 1 P-Channel - 55V 42A (Tc) 20 mOhm @ 42A, 10V 4V @ 250µA 180nC @ 10V 3500pF @ 25V 10V ±20V 170W (Tc)
Default Photo
Per Unit
$1.330
RFQ
1,909
In-stock
STMicroelectronics MOSFET N-CH 30V 120A TO-220AB TO-220-3 STripFET™ H6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220 0 1 N-Channel - 30V 120A (Tc) 3.2 mOhm @ 60A, 10V 2.5V @ 250µA 42nC @ 4.5V 3500pF @ 25V 4.5V, 10V ±20V 136W (Tc)
Default Photo
Per Unit
$6.020
RFQ
506
In-stock
STMicroelectronics MOSFET N-CH 950V 10A TO-247 TO-247-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 950V 10A (Tc) 900 mOhm @ 5A, 10V 4.5V @ 100µA 113nC @ 10V 3500pF @ 25V 10V ±30V 230W (Tc)
Default Photo
Per Unit
$2.560
RFQ
3,148
In-stock
Infineon Technologies MOSFET P-CH 55V 42A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-262 0 1 P-Channel - 55V 42A (Tc) 20 mOhm @ 42A, 10V 4V @ 250µA 180nC @ 10V 3500pF @ 25V 10V ±20V 170W (Tc)
Default Photo
Per Unit
$1.538
RFQ
24,800
In-stock
Infineon Technologies MOSFET P-CH 55V 42A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D2PAK 0 800 P-Channel - 55V 42A (Tc) 20 mOhm @ 42A, 10V 4V @ 250µA 180nC @ 10V 3500pF @ 25V 10V ±20V 170W (Tc)
Default Photo
Per Unit
$7.210
RFQ
968
In-stock
STMicroelectronics MOSFET N-CH 1KV 8.3A TO-247 TO-247-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 1000V 8.3A (Tc) 1.38 Ohm @ 4.15A, 10V 4.5V @ 100µA 162nC @ 10V 3500pF @ 25V 10V ±30V 230W (Tc)
Page 1 / 1