Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 20V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel - 20V 15A (Ta) 7 mOhm @ 15A, 10V 3V @ 250µA 42nC @ 4.5V 3100pF @ 10V 4.5V, 10V ±20V 2.5W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 20V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 20V 15A (Ta) 7 mOhm @ 15A, 10V 3V @ 250µA 42nC @ 4.5V 3100pF @ 10V 4.5V, 10V ±20V 2.5W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 20V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 N-Channel - 20V 15A (Ta) 7 mOhm @ 15A, 10V 3V @ 250µA 42nC @ 4.5V 3100pF @ 10V 4.5V, 10V ±20V 2.5W (Ta)
Default Photo
Per Unit
$0.576
VIEW
RFQ
Infineon Technologies MOSFET N-CH 20V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 N-Channel - 20V 15A (Ta) 7 mOhm @ 15A, 10V 3V @ 250µA 42nC @ 4.5V 3100pF @ 10V 4.5V, 10V ±20V 2.5W (Ta)
Default Photo
Per Unit
$2.830
VIEW
RFQ
STMicroelectronics MOSFET N-CH 60V 80A F7 TO220AB TO-220-3 STripFET™ Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Active TO-220 0 1 N-Channel - 60V 80A (Tc) 3.5 mOhm @ 40A, 10V 4V @ 250µA 55nC @ 10V 3100pF @ 10V 10V ±20V 158W (Tc)
Page 1 / 1