- Package / Case :
- Packaging :
- Mounting Type :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 650V TO-247-3 | TO-247-3 | Automotive, AEC-Q101, CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 650V | 63.3A (Tc) | 48 mOhm @ 29.4A, 10V | 4.5V @ 2.9mA | 270nC @ 10V | 7440pF @ 100V | 10V | ±20V | 500W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 135V 160A | TO-263-7, D²Pak (6 Leads + Tab) Variant | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK-7 | 0 | 800 | N-Channel | - | 135V | 160A (Tc) | 5.9 mOhm @ 96A, 10V | 4V @ 250µA | 315nC @ 10V | 11690pF @ 50V | 10V | ±20V | 500W (Tc) | |||
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Infineon Technologies | MOSFET N-CH 650V 83.2A TO247-3 | TO-247-3 | CoolMOS™ C6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO247-3 | 0 | 1 | N-Channel | - | 650V | 83.2A (Tc) | 37 mOhm @ 33.1A, 10V | 3.5V @ 3.3mA | 330nC @ 10V | 7240pF @ 100V | 10V | ±20V | 500W (Tc) |
