- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
-
- 0.85 A, - 0.85 A (1)
- 1.4 A, - 1.5 A (2)
- 3.4 A, - 2.8 A (1)
- 3.7 A, - 2.7 A (1)
- 3.8 A, - 2.5 A (1)
- 4.5 A, - 3.5 A (1)
- 4.98 A, - 4.13 A (1)
- 5.5 A, - 5.8 A (1)
- 6 A, - 4.2 A (2)
- 6.5 A, 4.2 A (1)
- 6.8 A, 4.6 A (1)
- 650 mA, 450 mA (2)
- 7 A, - 5 A (1)
- 7.2 A, 7.6 A (1)
- 7.3 A, - 5.3 A (1)
- 7.3 A, 5.3 A (1)
- 8.1 A, 7 A (1)
- 8.5 A, 7 A (1)
- 9 A, 7.4 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.021 Ohms, 0.056 Ohms (1)
- 0.21 Ohms, 0.788 Ohms (1)
- 100 mOhms, 140 mOhms (1)
- 100 mOhms, 280 mOhms (1)
- 119 mOhms, 113 mOhms (2)
- 14 mOhms, - 30 mOhms (1)
- 15 mOhms, 38 mOhms (1)
- 19 mOhms, 21 mOhms (1)
- 19 mOhms, 43 mOhms (1)
- 200 mOhms, 360 mOhms (2)
- 21 mOhms, 29 mOhms (1)
- 23 mOhms, 30 mOhms (1)
- 24 mOhms, 80 mOhms (1)
- 28 mOhms, 52 mOhms (1)
- 33 mOhms, 80 mOhms (1)
- 34 mOhms, 70 mOhms (1)
- 35 mOhms, 41 mOhms (1)
- 40 mOhms, 103 mOhms (1)
- 40 mOhms, 80 mOhms (1)
- 49 mOhms, 78 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 1.4 nC, 1.3 nC (2)
- 1.4 nC, 1.6 nC (1)
- 11.7 nC, 11.4 nC (2)
- 12.3 nC, 13.8 nC (1)
- 12.9 nC, 12.7 nC (1)
- 13.2 nC, 22 nC (2)
- 16.1 nC, 21.1 nC (1)
- 3.9 nC, 6.4 nC (1)
- 5.6 nC, 5 nC (1)
- 5.9 nC, 7.9 nC (1)
- 6.8 nC, 8.1 nC (1)
- 600 pC, - 2.4 nC (2)
- 9 nC, 12.7 nC (1)
- 9 nC, 7 nC (1)
- 9.2 nC, 21.1 nC (1)
- 9.8 nC, 10.5 nC (1)
- Applied Filters :
22 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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|
17,384
In-stock
|
Diodes Incorporated | MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC | +/- 20 V, +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 650 mA, 450 mA | 200 mOhms, 360 mOhms | 800 mV, - 2.6 V | 1.4 nC, 1.3 nC | Enhancement | |||||
|
959
In-stock
|
Fairchild Semiconductor | MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET | 20 V | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7 A, - 5 A | 28 mOhms, 52 mOhms | PowerTrench | ||||||||
|
2,077
In-stock
|
Diodes Incorporated | MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS | +/- 20 V, +/- 20 V | SMD/SMT | DFN3020-B-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.7 A, - 2.7 A | 100 mOhms, 280 mOhms | 1 V, - 3 V | 3.9 nC, 6.4 nC | Enhancement | |||||
|
5,965
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 1.4 A, - 1.5 A | 119 mOhms, 113 mOhms | 1.2 V, - 2 V | 600 pC, - 2.4 nC | Enhancement | |||||
|
2,046
In-stock
|
Diodes Incorporated | MOSFET 30V Vds 20V Vgs Complmtry Enh FET | +/- 20 V, +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.4 A, - 2.8 A | 100 mOhms, 140 mOhms | 1 V, - 2.3 V | 9 nC, 7 nC | Enhancement | |||||
|
11,319
In-stock
|
Diodes Incorporated | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | +/- 12 V, +/- 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.8 A, - 2.5 A | 34 mOhms, 70 mOhms | 500 mV, - 1.2 V | 12.3 nC, 13.8 nC | Enhancement | |||||
|
31,120
In-stock
|
Diodes Incorporated | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 6.5 A, 4.2 A | 15 mOhms, 38 mOhms | 1 V, - 2 V | 9.8 nC, 10.5 nC | Enhancement | |||||
|
1,549
In-stock
|
Diodes Incorporated | MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 6 A, - 4.2 A | 19 mOhms, 43 mOhms | 1 V, - 2 V | 11.7 nC, 11.4 nC | Enhancement | |||||
|
9,598
In-stock
|
Diodes Incorporated | MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC | +/- 20 V, +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 650 mA, 450 mA | 200 mOhms, 360 mOhms | 800 mV, - 2.6 V | 1.4 nC, 1.3 nC | Enhancement | |||||
|
1,852
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 1.4 A, - 1.5 A | 119 mOhms, 113 mOhms | 1.2 V, - 2 V | 600 pC, - 2.4 nC | Enhancement | |||||
|
1,484
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS 30V Comp Pair | 20 V | SMD/SMT | SO-8 | - 55 C | + 100 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 8.5 A, 7 A | 14 mOhms, - 30 mOhms | 1 V, - 1 V | 16.1 nC, 21.1 nC | Enhancement | |||||
|
2,436
In-stock
|
Diodes Incorporated | MOSFET Comp Pair Enh FET 30Vdss 20Vgss | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7.2 A, 7.6 A | 35 mOhms, 41 mOhms | 1 V, - 1 V | 13.2 nC, 22 nC | Enhancement | ||||||
|
2,400
In-stock
|
Diodes Incorporated | MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 5.5 A, - 5.8 A | 19 mOhms, 21 mOhms | 1 V, - 3 V | 13.2 nC, 22 nC | Enhancement | |||||
|
26,600
In-stock
|
Diodes Incorporated | MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 6 A, - 4.2 A | 40 mOhms, 80 mOhms | 1 V, - 2 V | 11.7 nC, 11.4 nC | Enhancement | |||||
|
49,000
In-stock
|
Diodes Incorporated | MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7.3 A, 5.3 A | 24 mOhms, 80 mOhms | 1 V, - 3 V | 12.9 nC, 12.7 nC | Enhancement | |||||
|
707
In-stock
|
Toshiba | MOSFET N and P Ch 30V FET 9A 1.5W 1190pF | SMD/SMT | SOP-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 9 A, 7.4 A | 21 mOhms, 29 mOhms | |||||||||||
|
7,500
In-stock
|
Diodes Incorporated | MOSFET MOSFET H-BRIDGE SOP-8L | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 4.98 A, - 4.13 A | 33 mOhms, 80 mOhms | 1 V, - 3 V | 9 nC, 12.7 nC | Enhancement | |||||
|
4,997
In-stock
|
Diodes Incorporated | MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 8.1 A, 7 A | 23 mOhms, 30 mOhms | 1 V, - 2.2 V | 9.2 nC, 21.1 nC | Enhancement | |||||
|
VIEW | Siliconix / Vishay | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 0.85 A, - 0.85 A | 0.21 Ohms, 0.788 Ohms | 1 V, - 2.6 V | 1.4 nC, 1.6 nC | Enhancement | |||||
|
VIEW | Vishay Semiconductors | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7.3 A, - 5.3 A | 0.021 Ohms, 0.056 Ohms | 1.5 V, - 2.5 V | 5.9 nC, 7.9 nC | Enhancement | |||||
|
2,932
In-stock
|
IR / Infineon | MOSFET TRENCH MOSFET - PACKAGE | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 6.8 A, 4.6 A | 40 mOhms, 103 mOhms | 1.3 V, - 1.3 V | 6.8 nC, 8.1 nC | Enhancement | |||||
|
2,382
In-stock
|
onsemi | MOSFET PCH+NCH 4V DRIVE SER | +/- 20 V, +/- 20 V | SMD/SMT | SOIC-8 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 4.5 A, - 3.5 A | 49 mOhms, 78 mOhms | 5.6 nC, 5 nC | Enhancement |