- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DE-475-6 (1)
- DirectFET-L8 (2)
- ISOPLUS-i4-PAK-5 (1)
- PLUS-247-3 (1)
- Power-56-8 (1)
- PowerPAK-SO-8 (1)
- PQFN-8 (1)
- SC-62-3 (1)
- SMPD-24 (1)
- SO-8 (1)
- SOP-Advance-8 (3)
- SOT-223-3 (3)
- SOT-223-4 (1)
- SOT-227-4 (4)
- SOT-23-3 (6)
- SOT-26-6 (1)
- SOT-89-3 (5)
- TDSON-8 (3)
- TO-220-3 (29)
- TO-220FP-3 (9)
- TO-247-3 (23)
- TO-251-3 (4)
- TO-252-3 (20)
- TO-262-3 (3)
- TO-263-3 (19)
- TO-264-3 (12)
- TO-268-3 (4)
- TO-3P-3 (8)
- TO-3PN-3 (7)
- TSDSON-8 (4)
- TSON-Advance-8 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Id - Continuous Drain Current :
-
- 1.2 A (1)
- 10 A (4)
- 10.9 A (3)
- 100 A (8)
- 100 mA (4)
- 102 A (2)
- 110 A (2)
- 120 A (8)
- 13 A (3)
- 130 A (1)
- 14 A (1)
- 140 A (2)
- 15.6 A (1)
- 155 A (1)
- 16 A (2)
- 17 A (9)
- 180 A (2)
- 19 A (1)
- 2.3 A (1)
- 2.8 A (1)
- 20 A (1)
- 220 mA (2)
- 230 mA (1)
- 24.2 A (1)
- 240 mA (1)
- 25 A (10)
- 25.5 A (4)
- 26 A (1)
- 27 A (1)
- 28 A (1)
- 3 A (2)
- 30 A (2)
- 310 mA (1)
- 33 A (3)
- 35 A (2)
- 350 mA (2)
- 360 mA (1)
- 375 mA (2)
- 4.4 A (3)
- 40 A (1)
- 41 A (1)
- 42 A (3)
- 44 A (6)
- 45 A (4)
- 46 A (1)
- 5 A (3)
- 50 A (6)
- 51 A (2)
- 55 A (1)
- 57 A (1)
- 59 A (1)
- 6 A (1)
- 6.2 A (1)
- 60 A (5)
- 600 mA (1)
- 61 A (2)
- 62 A (6)
- 64 A (8)
- 69 A (1)
- 7 A (1)
- 7.4 A (4)
- 76 A (3)
- 8.8 A (3)
- 82 A (3)
- 830 mA (1)
- 87 A (1)
- 9.3 A (4)
- 9.9 A (1)
- 90 A (3)
- 93 A (1)
- 96 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.052 Ohms (1)
- 0.29 Ohms (1)
- 1 Ohms (1)
- 1.1 Ohms (1)
- 1.75 Ohms (2)
- 10 Ohms (2)
- 100 mOhms (1)
- 108 mOhms (1)
- 110 mOhms (4)
- 110 Ohm (1)
- 12.9 mOhms (3)
- 122 mOhms (1)
- 13 mOhms (1)
- 140 mOhms (1)
- 146 mOhms (3)
- 165 mOhms (4)
- 168 mOhms (2)
- 17 mOhms (3)
- 17.5 mOhms (7)
- 19 mOhms (2)
- 2.2 Ohms (1)
- 2.4 Ohms (1)
- 2.8 Ohms (1)
- 20 mOhms (2)
- 22 mOhms (2)
- 220 mOhms (1)
- 23 mOhms (1)
- 230 mOhms (1)
- 235 mOhms (2)
- 24 mOhms (5)
- 250 mOhms (1)
- 27 mOhms (8)
- 270 mOhms (1)
- 275 mOhms (4)
- 29 mOhms (2)
- 29 Ohms (2)
- 32 mOhms (2)
- 320 mOhms (2)
- 33 mOhms (5)
- 35 mOhms (6)
- 36.3 mOhms (1)
- 371 mOhms (2)
- 38 mOhms (1)
- 39 mOhms (2)
- 4 Ohms (1)
- 40 mOhms (1)
- 41 mOhms (1)
- 42 mOhms (3)
- 42.5 mOhms (1)
- 420 mOhms (5)
- 430 mOhms (5)
- 44 mOhms (1)
- 46 mOhms (4)
- 47 mOhms (3)
- 48 mOhms (1)
- 49 mOhms (3)
- 5 Ohms (4)
- 50 mOhms (2)
- 50 Ohms (3)
- 51 mOhms (5)
- 58 mOhms (1)
- 60 mOhms (7)
- 69 mOhms (4)
- 7.8 Ohms (4)
- 70 mOhms (1)
- 72 mOhms (1)
- 72 Ohms (2)
- 75 mOhms (2)
- 77 mOhms (1)
- 84 mOhms (3)
- 85 mOhms (4)
- 9.5 Ohms (3)
- 900 mOhms (1)
- 94 mOhms (3)
- 95 mOhms (1)
- 97 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 105 nC (1)
- 11 nC (1)
- 11.4 nC (2)
- 110 nC (1)
- 12 nC (1)
- 13 nC (3)
- 142 nC (2)
- 16 nC (3)
- 180 nC (2)
- 185 nC (5)
- 19 nC (4)
- 2.1 nC (3)
- 22 nC (1)
- 255 nC (3)
- 29 nC (8)
- 29.5 nC (1)
- 3.5 nC (4)
- 345 nC (3)
- 37 nC (1)
- 4.2 nC (1)
- 4.7 nC (1)
- 40 nC (1)
- 45 nC (1)
- 47 nC (1)
- 5.5 nC (2)
- 6 nC (1)
- 640 nC (2)
- 7 nC (2)
- 70 nC (2)
- 72 nC (4)
- 73 nC (1)
- 78 nC (3)
- 86 nC (6)
- 89 nC (2)
- 92 nC (1)
- 99 nC (2)
- Channel Mode :
- Applied Filters :
180 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
23,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
|
|
20,530
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
|
|
402
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
|
|
11,072
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-CH MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 900 mOhms | Enhancement | ||||||
|
|
8,273
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1 Ohms | Enhancement | ||||||
|
|
11,925
In-stock
|
IXYS Integrated Circuits | MOSFET N Ch Dep Mode FET 250V | 15 V | SMD/SMT | SOT-89-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 250 V | 360 mA | 4 Ohms | Depletion | Clare | |||||
|
|
38,850
In-stock
|
Fairchild Semiconductor | MOSFET HIGH VOLTAGE | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 16 A | 220 mOhms | Enhancement | ||||||
|
|
3,173
In-stock
|
Fairchild Semiconductor | MOSFET 250V 3.0A 117 OHM NCH ULTRAFE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 3 A | 97 mOhms | Enhancement | UltraFET | |||||
|
|
1,769
In-stock
|
Fairchild Semiconductor | MOSFET TBD | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 20 A | 77 mOhms | Enhancement | ||||||
|
|
2,363
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | ||||||
|
|
2,000
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Chan MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 69 mOhms | Enhancement | ||||||
|
|
1,520
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 44 A | 69 mOhms | Enhancement | ||||||
|
|
1,381
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | UniFET | |||||
|
|
3,281
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 50 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
1,363
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 2.8 A | 122 mOhms | Enhancement | UltraFET | |||||
|
|
GET PRICE |
7,650
In-stock
|
Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | ||||
|
|
1,039
In-stock
|
Fairchild Semiconductor | MOSFET 250V NCHAN PwrTrench | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 38 mOhms | PowerTrench | |||||||
|
|
868
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel PowerTrench MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 50 A | 36.3 mOhms | Enhancement | PowerTrench | |||||
|
|
GET PRICE |
4,485
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
|
|
2,100
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | ||||
|
|
4,572
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | ||||||
|
|
4,194
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 371 mOhms | 2 V | 5.5 nC | Enhancement | OptiMOS | |||
|
|
4,152
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | ||||||
|
|
766
In-stock
|
Fairchild Semiconductor | MOSFET 250V 28A N-CH UNIFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 51 A | 60 mOhms | Enhancement | ||||||
|
|
GET PRICE |
13,610
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 89 nC | Enhancement | |||
|
|
1,713
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
5,310
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | 2 V | 11.4 nC | Enhancement | OptiMOS | |||
|
|
8,206
In-stock
|
Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 375 mA | 2.8 Ohms | Enhancement | ||||||
|
|
4,887
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | |||||||
|
|
472
In-stock
|
IXYS | MOSFET 155A 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 155 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS |
