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- Rds On - Drain-Source Resistance :
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- Applied Filters :
129 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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738
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 210 A | 14.5 mOhms | 5 V | 268 nC | Enhancement | Polar3, HiperFET | |||
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|
5,574
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 3.2 A | 2.2 Ohms | Enhancement | QFET | |||||
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|
582
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 43.5 A | 69 mOhms | Enhancement | QFET | |||||
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1,088
In-stock
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IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
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615
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 44 A | 36 mOhms | 2 V | 87 nC | Enhancement | ||||
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|
2,730
In-stock
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STMicroelectronics | MOSFET N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II ... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 2 V | 90 nC | Enhancement | ||||
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221
In-stock
|
IXYS | MOSFET 140 Amps 300V 0.024 Ohms Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | Enhancement | HyperFET | |||||
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73
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 192 A | 14.5 mOhms | 268 nC | Enhancement | HyperFET | ||||
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126
In-stock
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IXYS | MOSFET 82 Amps 300V 0.026 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 26 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
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|
1,028
In-stock
|
STMicroelectronics | MOSFET N-channel 300 V, 60A II Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 60 A | 45 mOhms | Enhancement | ||||||
|
|
2,360
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Ch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 14 A | 290 mOhms | Enhancement | ||||||
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805
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 28 A | 108 mOhms | Enhancement | UniFET | |||||
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798
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 21 A | 160 mOhms | Enhancement | QFET | |||||
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|
721
In-stock
|
Fairchild Semiconductor | MOSFET UniFET1 300V N-chan MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 70 mOhms | 5 V | 60 nC | UniFET | ||||
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2,670
In-stock
|
Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 59 A | 56 mOhms | Enhancement | ||||||
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573
In-stock
|
IXYS | MOSFET 36 Amps 300V 0.11 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 36 A | 92 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
|
|
265
In-stock
|
Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 125 nC | Enhancement | ||||
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|
625
In-stock
|
IXYS | MOSFET MOSFET N-CH 300V 36A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 36 A | 110 mOhms | Enhancement | ||||||
|
|
7,925
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 550 mA | 4 Ohms | 1.7 V | 7.6 nC | Enhancement | ||||
|
|
135
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | PolarHT | |||
|
|
3,216
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 550 mA | 2.3 Ohms | 1 V | 7.6 nC | Enhancement | ||||
|
|
129
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 150 A | 19 mOhms | HyperFET | |||||||||
|
|
109
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 150 A | 19 mOhms | HyperFET | |||||||||
|
|
25,000
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 5.5 A | 700 mOhms | Enhancement | ||||||
|
|
476
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 14 A | 290 mOhms | Enhancement | ||||||
|
|
966
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 9.1 A | 290 mOhms | Enhancement | QFET | |||||
|
|
354
In-stock
|
Fairchild Semiconductor | MOSFET UniFET1 300V N-Channel MOSFET, D2PAK | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 38 A | 103 mOhms | 3 V to 5 V | 56 nC | Enhancement | UniFET FRFET | |||
|
|
277
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 12 A | 160 mOhms | Enhancement | QFET | |||||
|
|
14,000
In-stock
|
Infineon Technologies | MOSFET 300V, 70A, 32 mOhm 180 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 300 V | 70 A | 32 mOhms | 5 V | 270 nC | Enhancement | ||||||
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|
51
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | Enhancement |
