- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,940
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 200 mOhms | Enhancement | UltraFET | |||||
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8,544
In-stock
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Diodes Incorporated | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 9.5 A | 14 mOhms | 1.5 V | 15 nC | Enhancement | ||||
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1,958
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.5A 200mOhm 16.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 9.5 A | 200 mOhms | 16.7 nC | ||||||||
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1,787
In-stock
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Fairchild Semiconductor | MOSFET Single PT4 Nch 20/8V zener in MLP2x2 | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.5 A | 60 mOhms | 400 mV | 10 nC | Enhancement | ||||
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748
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 360 mOhms | Enhancement | QFET | |||||
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1,334
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 360 mOhms | Enhancement | QFET | |||||
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644
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Ch QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 9.5 A | 270 mOhms | Enhancement | ||||||
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1,620
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 9 mOhms | 1 V | 45.7 nC | Enhancement | DIOFET | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 18 mOhms | ||||||||||
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1,844
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch ENH Mode PowerDI 12A - 9.5A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 10 mOhms | Enhancement | ||||||
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400
In-stock
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Toshiba | MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W | 20 V | Through Hole | TO-220SIS-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 9.5 A | 460 mOhms | 3 V | 19 nC | Enhancement | ||||||
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8,626
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.5 A | 730 mOhms | Enhancement | ||||||
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5,447
In-stock
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Fairchild Semiconductor | MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.5 A | 23 mOhms | Enhancement | PowerTrench | |||||
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VIEW | IXYS | MOSFET 14 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 9.5 A | 1 Ohms | Enhancement | HyperFET | |||||
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VIEW | Diodes Incorporated | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 9.5 A | 14 mOhms | 1.5 V | 15 nC | Enhancement | ||||
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224
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 300 mOhms | 23.3 nC | Enhancement | |||||
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587
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 300 mOhms | 2 V to 4 V | 23.3 nC | Enhancement |
