- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,443
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 1.4A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 119 mOhms | 1.2 V | 600 pC | Enhancement | ||||
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4,155
In-stock
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Diodes Incorporated | MOSFET 30V N-Chnl HDMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 220 mOhms | Enhancement | ||||||
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2,602
In-stock
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Fairchild Semiconductor | MOSFET 150V NCh PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 1.4 A | 425 mOhms | Enhancement | PowerTrench | |||||
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12,778
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 1.4A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 119 mOhms | 1.2 V | 600 pC | Enhancement | ||||
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16,713
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.4A SOT-323-3 | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 107 mOhms | 300 mV | 600 pC | Enhancement | ||||
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4,830
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23,3K | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 175 mOhms | 1.6 nC | Enhancement | |||||
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1,473
In-stock
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onsemi | MOSFET NFET IPAK 600V 2.2A 4.8R | 30 V | Through Hole | TO-247-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 4 Ohms | 4.5 V | 10.1 nC | |||||
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7,559
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 1.4A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 119 mOhms | 1.2 V | 600 pC | Enhancement | ||||
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3,558
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | ||||
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9,468
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.4A SOT-323-3 | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 107 mOhms | 300 mV | 600 pC | Enhancement | ||||
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GET PRICE |
1,047,000
In-stock
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Fairchild Semiconductor | MOSFET SOT-23 N-CH LOGIC | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 92 mOhms | Enhancement | PowerTrench | ||||
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9,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.4 A | 900 mOhms | Enhancement | ||||||
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277
In-stock
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IXYS | MOSFET 1.4 Amps 600 V 8 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 9 Ohms | Enhancement | ||||||
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266
In-stock
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IXYS | MOSFET 1.4 Amps 600 V 8 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 9 Ohms | 5.5 V | 5.2 nC | Enhancement | PolarHV | |||
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4
In-stock
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IXYS | MOSFET 1.4 Amps 1200V 15 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 1.4 A | 10.5 Ohms | 4.5 V | 24.8 nC | Enhancement | Polar | |||
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1,765
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | ||||
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96
In-stock
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IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | ||||||
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7
In-stock
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IXYS | MOSFET 1.4 Amps 1200V 15 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 1.4 A | 13 Ohms | Enhancement | ||||||
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9,125
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V | 8 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 840 mOhms | 400 mV | 1 nC | Enhancement | ||||
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6,000
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 110 mOhms | Enhancement | PowerTrench | |||||
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VIEW | IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | ||||||
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600
In-stock
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STMicroelectronics | MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM) | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.4 A | 8 Ohms | 3 V | 13 nC | Enhancement | SuperMesh | |||
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924
In-stock
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STMicroelectronics | MOSFET N-Ch 1050V 8Ohm 1.4A SuperMESH3 MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.4 A | 11 Ohms | 4.5 V | 13 nC | Enhancement |
