- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
26 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,763
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.6A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 70 mOhms | 1.2 V | 20 nC | Enhancement | |||||
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4,605
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V 2.6A/2.7OHM | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | Enhancement | QFET | ||||||
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6,472
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm Zener | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 4.5 V | 14 nC | SuperFET II | ||||||
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2,023
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 198 mOhms | 1 V | 3.8 nC | Enhancement | PowerTrench | ||||
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554
In-stock
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STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1.7 kV | 2.6 A | 7 Ohms | 3 V | 44 nC | Enhancement | |||||
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2,659
In-stock
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Fairchild Semiconductor | MOSFET 15a 55V N-Channel UltraFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 90 mOhms | Enhancement | UltraFET | ||||||
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1,936
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.6A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 70 mOhms | 1.2 V | 20 nC | Enhancement | |||||
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1,524
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 125 mOhms | Enhancement | PowerTrench | ||||||
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1,239
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm Zener | 20 V, 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 2.5 V | 11 nC | Enhancement | SuperFET II | ||||
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820
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm, Zener embeded, TO220F PKG | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 4.5 V | 14 nC | SuperFET II | ||||||
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1,242
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 185mOhms 12nC | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 185 mOhms | 12 nC | Enhancement | ||||||
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3,068
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | |||||
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18,740
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 7.96 Ohms | 2.5 V | 4.6 nC | Enhancement | CoolMOS | ||||
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304
In-stock
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STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1700 V | 2.6 A | 13 Ohms | 3 V | 44 nC | Enhancement | |||||
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2,259
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 2.6A 185mOhm 12nC | 30 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 185 mOhms | 12 nC | |||||||||
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2,765
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||||
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3,745
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||||
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574
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 150V N-CHANNEL | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 650 mOhms | 2.7 V | 6.6 nC | Enhancement | |||||
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GET PRICE |
9,990
In-stock
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onsemi | MOSFET NFET DPAK 2.6A 3.6R | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 3.3 Ohms | 4.5 V | 12 nC | |||||
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4,000
In-stock
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onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.5 V | 4.5 nC | ||||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | PowerDI | ||||
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VIEW | onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.1 V | 4.5 nC | Enhancement | |||||
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1,204
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | ||||
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1,191
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | ||||
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6
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | ||||
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10
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement |