- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 1.16 mOhms (1)
- 1.4 mOhms (2)
- 1.6 mOhms (1)
- 1.8 mOhms (2)
- 1.9 mOhms (1)
- 13 mOhms (1)
- 19 mOhms (2)
- 2 mOhms (1)
- 2.4 mOhms (2)
- 2.6 mOhms (2)
- 3 mOhms (1)
- 3.1 mOhms (1)
- 3.2 mOhms (1)
- 3.3 mOhms (8)
- 3.9 mOhms (5)
- 4 mOhms (5)
- 4.2 mOhms (2)
- 4.7 mOhms (1)
- 5 mOhms (2)
- 5.3 mOhms (2)
- 5.9 mOhms (1)
- 7 mOhms (5)
- 9 mOhms (1)
- 900 uOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
52 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,703
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 160 A | 1.8 mOhms | 200 nC | Enhancement | Directfet | ||||
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3,833
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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700
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.16 mOhms | 129 nC | PowerTrench | |||||||
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1,254
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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1,940
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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454,600
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||
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2,800
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | OptiMOS | |||
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1,422
In-stock
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Infineon Technologies | MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 160 A | 4.7 mOhms | 3 V | 210 nC | StrongIRFET | ||||
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602
In-stock
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STMicroelectronics | MOSFET N-Channel 40V Pwr Mosfet | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 2 mOhms | Enhancement | ||||||
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956
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
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1,457
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 4 V | 85 nC | |||||
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2,368
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||
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868
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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692
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
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728
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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1,045
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | ||||
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800
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 160A 4mOhm 93.3nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 3 V | 140 nC | |||||||
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625
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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359
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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776
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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508
In-stock
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IR / Infineon | MOSFET 30V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 1.6 mOhms | 2.35 V | 55 nC | |||||
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1,079
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||
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46
In-stock
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IXYS | MOSFET 160A 300V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 160 A | 19 mOhms | 5 V | 335 nC | Enhancement | ||||
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118
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 160 A | 9 mOhms | 4.5 V | 253 nC | Enhancement | TrenchT2, HiperFET | |||
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18,400
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 2.4 mOhms | 1.8 V | 35 nC | Directfet | ||||
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128
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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31
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 160 A | 7 mOhms | Enhancement | QFET | |||||
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37
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 5.9 mOhms | 3 V | 140 nC | Enhancement | ||||
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8
In-stock
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IXYS | MOSFET 160A 300V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 160 A | 19 mOhms | 5 V | 335 nC | Enhancement | GigaMOS | ||||
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44
In-stock
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IXYS | MOSFET 160Amps 40V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 5 mOhms | 4 V | 79 nC | Enhancement |
