- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
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- Qg - Gate Charge :
- Applied Filters :
96 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,086
In-stock
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Fairchild Semiconductor | MOSFET 100V 44a .28 Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 28 mOhms | Enhancement | UltraFET | |||||
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2,000
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Chan MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 69 mOhms | Enhancement | ||||||
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1,520
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 44 A | 69 mOhms | Enhancement | ||||||
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1,240
In-stock
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Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
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1,717
In-stock
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Fairchild Semiconductor | MOSFET SuperFET3 650V 70mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 44 A | 70 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
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7,220
In-stock
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Fairchild Semiconductor | MOSFET Single N-Ch 500V .12Ohm SMPS | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 120 mOhms | Enhancement | ||||||
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3,152
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 44 A | 19 mOhms | 3 V | 26 nC | OptiMOS | ||||
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511
In-stock
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IXYS | MOSFET 500V 44A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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232
In-stock
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IXYS | MOSFET 44 Amps 800V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | Enhancement | HyperFET | |||||
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615
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 44 A | 36 mOhms | 2 V | 87 nC | Enhancement | ||||
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113
In-stock
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IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | |||
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1,498
In-stock
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Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
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1,946
In-stock
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IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 44 A | 1.1 mOhms | 1.6 V | 77 nC | |||||
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2,656
In-stock
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Fairchild Semiconductor | MOSFET 30V NCh PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 11.1 mOhms | 3 V | 7 nC | PowerTrench | ||||
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2,235
In-stock
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Fairchild Semiconductor | MOSFET 100V NChannel UniFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 24 mOhms | UltraFET | |||||||
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303
In-stock
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Fairchild Semiconductor | MOSFET SuperFET3 650V 67 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
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1,121
In-stock
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Fairchild Semiconductor | MOSFET 44a 60V 0.025 Ohm Logic Level N-Ch | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 44 A | 18 mOhms | Enhancement | ||||||
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798
In-stock
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Fairchild Semiconductor | MOSFET TO220F, 250V, NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 58 mOhms | 5 V | 47 nC | Enhancement | UniFET | |||
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5,290
In-stock
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IR / Infineon | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | |||||
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801
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 6.5 mOhms | 4 V | 76 nC | Enhancement | ||||
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655
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 18 mOhms | Enhancement | ||||||
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4,146
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 34 V | 44 A | 7.7 mOhms | OptiMOS | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 44A 12mOhm 86.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 44 A | 12 mOhms | 86.7 nC | ||||||||
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770
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 7.5 mOhms | Enhancement | ||||||
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600
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 5.3 mOhms | Enhancement | ||||||
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800
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 44 A | 8.5 mOhms | Enhancement | ||||||
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434
In-stock
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IR / Infineon | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 44 A | 1.5 mOhms | Enhancement | ||||||
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384
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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GET PRICE |
8,500
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement |
