- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,541
In-stock
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STMicroelectronics | MOSFET N-Ch 400V 3.3 Ohm 3A SuperMESH3 3.3W | 30 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 400 V | 1.8 A | 3 Ohms | 3.75 V | 11 nC | |||||||
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14,838
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.8 A | 220 mOhms | 800 mV | 17 nC | Enhancement | ||||
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5,832
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.8 A | 6.3 Ohms | Enhancement | ||||||
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3,074
In-stock
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Diodes Incorporated | MOSFET 60V UMOS H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V | 1.8 A | 300 mOhms, 425 mOhms | 1 V | 3.2 nC, 5.1 nC | Enhancement | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3 | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 400 V | 1.8 A | 3.4 Ohms | 4.5 V | 11 nC | |||||||
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7,326
In-stock
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onsemi | MOSFET NCH 1.7A 30V SOT-363 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1.8 A | 188 mOhms | 2.6 V | 2 nC | |||||
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8,300
In-stock
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onsemi | MOSFET LOW-NOISE AMPLIFIER | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 180 mOhms | 2 nC | ||||||
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737
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.8 A | 177 mOhms | 2.1 V | 9.3 nC | Enhancement | ||||
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1,352
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.8 A | 153 mOhms | 800 mV | 14.3 nC | Enhancement | ||||
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2,360
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.8 A | 153 mOhms | 800 mV | 14.3 nC | Enhancement | ||||
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GET PRICE |
6,060
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS C3 | 20 V | SMD/SMT | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | ||||
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1,700
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.8 A | 177 mOhms | 2.1 V | 9.3 nC | Enhancement | ||||
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175
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | |||||
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9,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 1.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | 9.5 nC | CoolMOS | |||||
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70
In-stock
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Nexperia | MOSFET 40V 2A PNP Trans N-chan Trench MOSFET | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 1.8 A | 580 mOhms | 0.7 V | 0.89 nC | Enhancement | |||||
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4,840
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 1.8 A | 400 mOhms | 500 mV | 1.1 nC | Enhancement | |||||
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1,103
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS S5 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | |||||
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1,994
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.8 A | 220 mOhms | 800 mV | 17 nC | Enhancement | ||||
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25,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | |||||
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9,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 1.8A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | |||||
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VIEW | onsemi | MOSFET SWITCHING DEVICE | SOT-563-6 | Reel | Si | N-Channel | 30 V | 1.8 A | 180 mOhms | ||||||||||||
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1,474
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 1.8A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | |||||
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4,880
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 135 mOhms | 1.2 V | 2 nC | Enhancement | |||||
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4,995
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 330 mOhms | 1.2 V | 2 nC | Enhancement |
