- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.058 Ohms (1)
- 100 mOhms (5)
- 105 mOhms (1)
- 11 mOhms (2)
- 135 mOhms (2)
- 140 mOhms (2)
- 2.7 mOhms (1)
- 20 mOhms (1)
- 23 mOhms (4)
- 25 mOhms (2)
- 260 mOhms (1)
- 32 mOhms (1)
- 39 mOhms (1)
- 40 mOhms (1)
- 50 mOhms (4)
- 65 mOhms (1)
- 7.5 mOhms (5)
- 70 mOhms (1)
- 76 mOhms (1)
- 8.1 mOhms (1)
- 8.5 mOhms (3)
- 89 mOhms (1)
- 90 mOhms (2)
- Applied Filters :
44 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,959
In-stock
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Fairchild Semiconductor | MOSFET 80V N Chan Shielded Gate Power Trench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 48 A | 8.5 mOhms | 4 V | 53 nC | Power Clip | |||||
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2,423
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 20 mOhms | Enhancement | ||||||
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3,588
In-stock
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Fairchild Semiconductor | MOSFET PT7 N-ch 80/20V Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 48 A | 8.5 mOhms | 2 V | 31 nC | PowerTrench Power Clip | ||||
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458
In-stock
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Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 105 mOhms | Enhancement | ||||||
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485
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V/50A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 89 mOhms | 5 V | 105 nC | |||||
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9,935
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 24 nC | Enhancement | OptiMOS | |||
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574
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 650 V, 0.051 Ohm typ., 50 A MDmes... | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 48 A | 65 mOhms | 4 V | 88 nC | Enhancement | |||||
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747
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 25 mOhms | Enhancement | ||||||
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5,092
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | |||
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150
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 48 A | 0.058 Ohms | 3 V | 88 nC | Enhancement | |||||
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688
In-stock
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Fairchild Semiconductor | MOSFET N-Channel FET Enhancement Mode | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 25 mOhms | Enhancement | ||||||
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303
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS N-Ch 100V 48A 3-Pin 3+Tab | 25 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 48 A | 39 mOhms | Enhancement | ||||||
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1,315
In-stock
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Infineon Technologies | MOSFET MOSFT 48A 93.3nC 260mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 48 A | 260 mOhms | 93.3 nC | ||||||||
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1,230
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 48A 23mOhm 40nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | ||||||||
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558
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 48A 23mOhm 40nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | ||||||||
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40
In-stock
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IXYS | MOSFET 600V 48A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 135 mOhms | Enhancement | HyperFET | |||||
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1,563
In-stock
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onsemi | MOSFET NFET SO8FL 30V 48A 6MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 8.5 mOhms | |||||||
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760
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 140 mOhms | 140 nC | HyperFET | |||||||
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65
In-stock
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IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | Enhancement | ||||||
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2,636
In-stock
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Texas instruments | MOSFET 30V N-Channel MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 8.1 mOhms | 1.5 V | 9 nC | NexFET | ||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 48 A | 70 mOhms | 2 V | 225 nC | Enhancement | |||||
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40
In-stock
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IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Screw Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 48 A | 40 mOhms | 2.4 V | 115 nC | Enhancement | ||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 48 A | 11 mOhms | 2.5 V | 35 nC | Enhancement | ||||
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4,370
In-stock
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Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 11 mOhms | 1.7 V | 6 nC | NexFET | ||||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 48 A | 76 mOhms | 5 V | 190 nC | Enhancement | Polar3, HiperFET | ||||
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VIEW | IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | 4.5 V | 60 nC | Enhancement | Trench | |||
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4,900
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 24 nC | Enhancement | OptiMOS | |||
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2
In-stock
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IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 140 mOhms | 140 nC | HyperFET |
