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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,949
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 81 A | 4.5 mOhms | 2 V | 34 nC | Enhancement | OptiMOS | |||
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4,320
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 81A 12mOhm 86.6nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 81 A | 12 mOhms | 86.6 nC | ||||||||
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3,349
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 81A 5.7mOhm 10nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | |||||||||
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GET PRICE |
48,410
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 81 A | 4.5 mOhms | 2 V | 34 nC | Enhancement | OptiMOS | ||
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2,506
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 5.7mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | ||||||||
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426
In-stock
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IR / Infineon | MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC |
