- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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263,500
In-stock
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onsemi | MOSFET 20V N&P-Channel Power Trench | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 700 mA | 300 mOhms | Enhancement | PowerTrench | |||||
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1,185
In-stock
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Fairchild Semiconductor | MOSFET FDG6335N | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 700 mA | 300 mOhms | Enhancement | PowerTrench | |||||
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23,978
In-stock
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Fairchild Semiconductor | MOSFET Dual 20V N-Channel PowerTrench | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 700 mA | 400 mOhms | Enhancement | PowerTrench | |||||
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331
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 700 mA | 540 mOhms | 2 V | 4.6 nC | Enhancement | ||||
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77
In-stock
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IXYS | MOSFET 0.5 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 700 mA | 15 Ohms | 4.5 V | 7.8 nC | Enhancement | ||||
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17,995
In-stock
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Fairchild Semiconductor | MOSFET 20V N&P Chan PowerTrench | 12 V | SMD/SMT | SC-70-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 700 mA | 300 mOhms, 420 mOhms | 1.1 nC, 1.4 nC | Enhancement | PowerTrench |
