- Manufacture :
- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,068
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 3 V | 44 nC | Enhancement | ||||
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3,885
In-stock
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IR / Infineon | MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 89 A | 8 mOhms | 3 V | 66 nC | |||||||
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4,660
In-stock
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Infineon Technologies | MOSFET 75V, 89A, DirectFET 5.7mOhm, 124nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 89 A | 4.5 mOhms | 3.7 V | 124 nC | StrongIRFET | ||||
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2,584
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 89 A | 10.5 mOhms | 27 nC | Enhancement | |||||
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572
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 89A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 89 A | 2.4 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
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847
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 89A 9.4mOhm 71nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 89 A | 9.4 mOhms | 71 nC | ||||||||
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236
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 89A 10mOhm 65.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 89 A | 18 mOhms | 2 V | 98 nC | |||||
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1,480
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 89A 7mOhm SGL N-CH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 89 A | 4.7 mOhms | 1.5 V | 25.4 nC | Enhancement | ||||
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20
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 89A 9.4mOhm 71nC | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 89 A | 9.4 mOhms | 4 V | 110 nC | |||||||
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102
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 10mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 10 mOhms | 65.3 nC | Enhancement | ||||||
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3,000
In-stock
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onsemi | MOSFET NFET SO8FL 60V 92A 4.5MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 89 A | 4.7 mOhms | 2 V | 15.7 nC | |||||
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1,465
In-stock
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onsemi | MOSFET Single N-Channel 30V,89A,7mOhm | SMD/SMT | SO-FL-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 89 A | 7 mOhms | |||||||||
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VIEW | onsemi | MOSFET NFET DPAK 25V 89A 0.0047R | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 25 V | 89 A | 4.7 mOhms | |||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 89A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 89 A | 2.4 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 44 nC | Enhancement | ||||||
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2,393
In-stock
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IR / Infineon | MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 44 nC | ||||||||
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1,824
In-stock
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IR / Infineon | MOSFET 60V SINGLE N-CH 6.7mOhms 40nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 89 A | 6.7 mOhms | 4 V | 40 nC | Enhancement | ||||
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73
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 10mOhms 65.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 10 mOhms | 1 V to 2 V | 65.3 nC | Enhancement | ||||
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22
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 89 A | 9.4 mOhms | 2 V to 4 V | 71 nC | Enhancement |
