- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
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17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,837
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.8 A | 140 mOhms | Enhancement | ||||||
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10,645
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.8 A | 170 mOhms | Enhancement | ||||||
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6,978
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.8 A | 2.5 Ohms | Enhancement | ||||||
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3,844
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2.8 A | 128 mOhms | 3.1 V | 4.9 nC | PowerTrench | ||||
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1,363
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 2.8 A | 122 mOhms | Enhancement | UltraFET | |||||
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6,499
In-stock
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Fairchild Semiconductor | MOSFET 60V Single | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.8 A | 110 mOhms | Enhancement | ||||||
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2,124
In-stock
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Fairchild Semiconductor | MOSFET N-CH/600V/5A/QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2.8 A | 2 Ohms | Enhancement | ||||||
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GET PRICE |
1,937,000
In-stock
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onsemi | MOSFET NFET SOT23 20V 2.8A 85mOhm | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 85 mOhms | Enhancement | |||||
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366
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 61 mOhms | 300 mV | 2.8 nC | Enhancement | ||||
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2,987
In-stock
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Diodes Incorporated | MOSFET 60V N-CH INTELLIFET 100mOhm 2.8A 480mJ | 5 V | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.8 A | 75 mOhms | 700 mV | Enhancement | IntelliFET | ||||
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6,000
In-stock
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onsemi | MOSFET NFET SOT23 20V 2.8A 85MO | SMD/SMT | SOT-23-3 | Reel | Si | N-Channel | 20 V | 2.8 A | 85 mOhms | |||||||||||
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1,811
In-stock
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Fairchild Semiconductor | MOSFET 600V, NCH MOSFET | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2.8 A | 2.5 Ohms | |||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT363,3K | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 48 mOhms | 7 nC | Enhancement | |||||
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2,402
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 55V, 2.8A, 75 mOhm | 20 V | SMD/SMT | SOT-223-4 | + 150 C | Reel | Si | N-Channel | 55 V | 2.8 A | 75 mOhms | 12.2 nC | ||||||||
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2,295
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 8.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 2.8 A | 1.26 Ohms | 3.5 V | 10 nC | Enhancement | CoolMOS | |||
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1,343
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 2.8 A | 75 mOhms | 4 V | 12.2 nC | Enhancement | ||||
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1,430
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 8.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 2.8 A | 1.26 Ohms | 3.5 V | 10 nC | Enhancement |
