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26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,518
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 10.5 mOhms | 2 V | 35 nC | Enhancement | ||||
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20,000
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC | Enhancement | ||||
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2,262
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | |||||
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3,000
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 29 nC | Enhancement | ||||||
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2,555
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | ||||||
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3,967
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 59 A | 10 mOhms | 1.4 V | 33.5 nC | Enhancement | ||||
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573
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 59 A | 49 mOhms | Enhancement | ||||||
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2,670
In-stock
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Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 59 A | 56 mOhms | Enhancement | ||||||
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1,548
In-stock
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IR / Infineon | MOSFET MOSFT 100V 59A 18mOhm 82nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | ||||||||
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90,700
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 59A 18mOhm 82nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | ||||||||
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410
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 108mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 108 mOhms | 82 nC | Enhancement | ||||||
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844
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 59 A | 9 mOhms | 3.7 V | 83 nC | Enhancement | StrongIRFET | |||||
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77
In-stock
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Fairchild Semiconductor | MOSFET 35V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 35 V | 59 A | 10 mOhms | Enhancement | PowerTrench | |||||
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81
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | |||||
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383
In-stock
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Toshiba | MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 7.4 mOhms | 2 V to 4 V | 33 nC | Enhancement | ||||||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 32 mOhms | 76 nC | ||||||||
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1,584
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 59 A | 9.5 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC | |||||
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VIEW | onsemi | MOSFET 30V 46A 6.2 mOhm Single N-Chan u8FL | SMD/SMT | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 59 A | 6.2 mOhms | ||||||||||
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968
In-stock
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IR / Infineon | MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 59 A | 12.5 mOhms | 9.7 nC | ||||||||
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1,744
In-stock
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IR / Infineon | MOSFET MOSFT 55V 59A 14.5mOhm 29nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 44 nC | |||||||
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353
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 29 nC | Enhancement | |||||
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32
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | |||||
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2
In-stock
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IR / Infineon | MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 30 V | 59 A | 12.5 mOhms | 9.7 nC | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC |
