- Vgs - Gate-Source Voltage :
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29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,890
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Nch Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 72 A | 19 mOhms | 2 V | 59 nC | Enhancement | PowerTrench | |||
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657
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||
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2,020
In-stock
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IR / Infineon | MOSFET MOSFT 55V 72A 12mOhm 86.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 72 A | 12 mOhms | 86.7 nC | ||||||||
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GET PRICE |
144,900
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 72A 11mOhm 80nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 72 A | 11 mOhms | 80 nC | |||||||
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266
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET SWITCH | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 18.6 mOhms | 100 nC | ||||||||
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510
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 72A 14mOhm 110nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 72 A | 110 mOhms | 110 nC | ||||||||
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690
In-stock
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IR / Infineon | MOSFET MOSFT 9999A | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 72 A | 3.7 mOhms | 190 nC | |||||||||
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46
In-stock
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IXYS | MOSFET DIODE Id82 BVdass600 | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 72 A | 75 mOhms | 5 V | 240 nC | Enhancement | Polar, HiPerFET | |||
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2,990
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 72 A | 3 mOhms | 1.2 V | 15 nC | Enhancement | ||||
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897
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 72A 12mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 72 A | 12 mOhms | 4 V | 73.3 nC | |||||
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200
In-stock
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IR / Infineon | MOSFET MOSFT 200V 76A 23.2mOhm 100nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||
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792
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1700V, 72A | - 5 V, + 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 72 A | 45 mOhms | 2 V | 188 nC | Enhancement | ||||
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6,000
In-stock
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Toshiba | MOSFET N-Ch 40V 1570pF 24.4nC 50A 36W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 5.4 mOhms | 1.4 V | 24 nC | Enhancement | |||||
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167
In-stock
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Toshiba | MOSFET MOSFET NCh 3.7ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 72 A | 3.7 mOhms | 2 V to 4 V | 81 nC | Enhancement | ||||
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250
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-252-3 | Tube | Si | N-Channel | 200 V | 72 A | 100 nC | ||||||||||
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VIEW | IXYS | MOSFET 72 Amps 200V 33 Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 200 V | 72 A | 33 mOhms | |||||||||||
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VIEW | IXYS | MOSFET 72 Amps 200V 33 Rds | Through Hole | TO-220-3 | Tube | Si | N-Channel | 200 V | 72 A | 33 Ohms | |||||||||||
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VIEW | IXYS | MOSFET 72 Amps 200V 33 Rds | Through Hole | TO-3P-3 | Tube | Si | N-Channel | 200 V | 72 A | 33 Ohms | |||||||||||
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VIEW | IXYS | MOSFET 72 Amps 200V 33 Rds | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 200 V | 72 A | 33 Ohms | |||||||||||
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VIEW | IXYS | MOSFET 72 Amps 300V 52 Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 300 V | 72 A | 52 Ohms | |||||||||||
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VIEW | IXYS | MOSFET 72 Amps 300V 52 Rds | Through Hole | TO-3P-3 | Tube | Si | N-Channel | 300 V | 72 A | 52 Ohms | |||||||||||
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VIEW | Toshiba | MOSFET MOSFET NCh3.7ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 72 A | 3.7 mOhms | 2 V to 4 V | 130 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 72 Amps 550V 0.07 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 72A D2PAK-2 | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 72 A | 150 mOhms | CoolMOS | ||||||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 3.8 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 72 Amps 500V 0.055 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 72 A | 55 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 72 Amps 550 V 0.07 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 72 Amps 200 V 0.033 W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 72 Amps 200V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement |
