- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.125 Ohms (1)
- 105 mOhms (1)
- 110 mOhms (1)
- 115 mOhms (1)
- 120 mOhms (3)
- 123 mOhms (2)
- 130 mOhms (2)
- 16.2 mOhms (2)
- 160 mOhms (1)
- 165 mOhms (2)
- 169 mOhms (1)
- 190 mOhms (2)
- 200 mOhms (2)
- 215 mOhms (2)
- 230 mOhms (1)
- 266 mOhms (1)
- 27 mOhms (1)
- 330 mOhms (2)
- 56 mOhms (1)
- 66 mOhms (1)
- 67 mOhms (1)
- 70 mOhms (2)
- 72 mOhms (1)
- 75 mOhms (1)
- 78 mOhms (1)
- 83 mOhms (3)
- 85 mOhms (2)
- 92 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
42 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
1,267,100
In-stock
|
Fairchild Semiconductor | MOSFET SSOT-6 P-CH | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 105 mOhms | Enhancement | PowerTrench | |||||
|
7,247
In-stock
|
Fairchild Semiconductor | MOSFET -20V Common Drain PCh 1.5V PowerTrench | 8 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | Enhancement | PowerTrench | ||||||
|
10,376
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 165 mOhms | 9.5 nC | |||||||||
|
10,175
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 165 mOhms | 9.5 nC | |||||||||
|
25,000
In-stock
|
Fairchild Semiconductor | MOSFET -30V -3A 115 OHM PoserTrench MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 115 mOhms | Enhancement | PowerTrench | ||||||
|
5,041
In-stock
|
Fairchild Semiconductor | MOSFET -20V P-Channel 1.5V PwrTrh WL-CSP MOSFET | 8 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 67 mOhms | Enhancement | PowerTrench | ||||||
|
3,880
In-stock
|
STMicroelectronics | MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI | 20 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 160 mOhms | 4 V | 6.4 nC | ||||||||
|
3,988
In-stock
|
Fairchild Semiconductor | MOSFET MLP 2X2 DUAL INTEGRATED PCH PO | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | Enhancement | PowerTrench | ||||||
|
10,285
In-stock
|
Diodes Incorporated | MOSFET P-Channel 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 72 mOhms | Enhancement | |||||||
|
8,449
In-stock
|
onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3 A | 215 mOhms | - 1.4 V | 5.6 nC | Enhancement | |||||
|
2,825
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.13 Ohm 3A STripFET VI | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | 2 V | 6.4 nC | Enhancement | STripFET | ||||
|
1,695
In-stock
|
Fairchild Semiconductor | MOSFET -20V P-Ch 1.5 V PowerTrench | 8 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 85 mOhms | Enhancement | PowerTrench | ||||||
|
1,636
In-stock
|
Fairchild Semiconductor | MOSFET Single P-Ch MOSFET Power Trench | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 78 mOhms | Enhancement | PowerTrench | ||||||
|
5,654
In-stock
|
Diodes Incorporated | MOSFET 30V P-CH MOSFET | 12 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 85 mOhms | - 1.3 V | 11.6 nC | Enhancement | |||||
|
3,028
In-stock
|
Vishay Semiconductors | MOSFET 30V 3A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 0.125 Ohms | - 2 V | 6.5 nC | Enhancement | TrenchFET | ||||
|
5,443
In-stock
|
onsemi | MOSFET PCH 1.8V DRIVE SERIES | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 83 mOhms | |||||||||||
|
588
In-stock
|
Nexperia | MOSFET TAPE13 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 330 mOhms | Enhancement | |||||||
|
6,303
In-stock
|
onsemi | MOSFET -20V -3A P-Channel w/3A Schottky | 12 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 200 mOhms | Enhancement | |||||||
|
GET PRICE |
282,900
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | - 1.25 V | 7.3 nC | Enhancement | ||||
|
5,830
In-stock
|
onsemi | MOSFET PCH 1.8V DRIVE SERIES | SOT-323-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 83 mOhms | ||||||||||||
|
105
In-stock
|
Fairchild Semiconductor | MOSFET MFET-20V P-CH 1.7V PowerTrench WL-CSP | 12 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 66 mOhms | Enhancement | PowerTrench | ||||||
|
GET PRICE |
9,800
In-stock
|
onsemi | MOSFET 60V P-Ch PowerTrench Integrated | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 110 mOhms | Enhancement | PowerTrench | |||||
|
622
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 266 mOhms | 4 V | 120 nC | Enhancement | |||||
|
161,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | - 1.2 V | 5.5 nC | Enhancement | |||||
|
28
In-stock
|
Diodes Incorporated | MOSFET P-Channel 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 75 mOhms | Enhancement | |||||||
|
1,118
In-stock
|
Texas instruments | MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 3 A | 16.2 mOhms | - 1.1 V | 6.3 nC | Enhancement | NexFET | ||||
|
821
In-stock
|
Texas instruments | MOSFET CSD23203W 8V P-Ch NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 8 V | - 3 A | 16.2 mOhms | - 0.8 V | 4.9 nC | NexFET | ||||||
|
2,580
In-stock
|
Texas instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | +/- 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 27 mOhms | - 1.15 V | 4.4 nC | Enhancement | NexFET | ||||
|
976
In-stock
|
Texas instruments | MOSFET 20V P-Ch NexFET | 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 92 mOhms | - 0.8 V | 3.3 nC | ||||||
|
17,885
In-stock
|
Diodes Incorporated | MOSFET P-Ch 60 Volt 3.0A | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 190 mOhms | Enhancement |