- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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6,324
In-stock
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Fairchild Semiconductor | MOSFET 250V 3.1A 2.1Ohm P-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 3.1 A | 2.1 Ohms | Enhancement | QFET | |||
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5,570
In-stock
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Fairchild Semiconductor | MOSFET -20V Dual P-CH PowerTrench MOSFET | - 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.1 A | 155 mOhms | Enhancement | PowerTrench | |||
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12,688
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Channel PT MFET SCHOTTKY | - 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.1 A | 95 mOhms | Enhancement | PowerTrench | |||
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6,972
In-stock
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Fairchild Semiconductor | MOSFET -20V Dual P-Channel PowerTrench MOSFET | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.1 A | 60 mOhms | Enhancement | PowerTrench | |||
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1,713
In-stock
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IR / Infineon | MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.1 A | 205 mOhms | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 3.1 A | 65 mOhms | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.1 A | 205 mOhms | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 3.1 A | 110 mOhms | Enhancement |
