- Manufacture :
- Vgs - Gate-Source Voltage :
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- Rds On - Drain-Source Resistance :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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974
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.8A 54mOhm -2.5V cpbl | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 9.8 A | 28.1 mOhms | 14 nC | ||||||||
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255
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.8A 17.5mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 17.5 mOhms | 14 nC | Enhancement | ||||
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6,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 41 nC | Enhancement | |||
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6,000
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 30Vdss 25Vgss | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 41 nC | Enhancement | |||
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6,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 58 nC | Enhancement | ||||
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1,955
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 17.5mOhms 14nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 9.8 A | 28.1 mOhms | 14 nC | ||||||||
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1,732
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 17.5mOhms 14nC | 25 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 17.5 mOhms | 14 nC |
