- Mounting Style :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,179
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 30V 9.7A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC | ||||||||
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19,920
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.7A 200mOhm 16.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 9.7 A | 200 mOhms | 16.7 nC | ||||||||
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2,861
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 35 mOhms | 2.1 V | 6 nC | Enhancement | ||||
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965
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 11 mOhms | 1.05 V | 18.85 nC | Enhancement | ||||
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1,201
In-stock
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Toshiba | MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | ||||
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285
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 327 mOhms | 3.7 V | 20 nC | Enhancement | |||||
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60
In-stock
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Toshiba | MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC | 30 V | Through Hole | TO-220FP-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 327 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | ||||||
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97
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | ||||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 350 mOhms | 3 V | 25 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 9.7A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 18.7 mOhms | 4.6 nC | ||||||||
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VIEW | Toshiba | MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A | SMD/SMT | DFN8x8-5 | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | ||||||||||
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2,339
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC |