- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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2,711
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 P-CH -20V | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.2 A | 135 mOhms | Enhancement | PowerTrench | ||||
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1,041
In-stock
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Nexperia | MOSFET P-CH -20 V -1.2 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 1.2 A | 210 mOhms | 4 nC | |||||||||
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25,700
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 P-CH 60V | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.2 A | 170 mOhms | Enhancement | PowerTrench | ||||
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VIEW | Toshiba | MOSFET Vds=-12V Id=1.2A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 1.2 A | 160 mOhms | Enhancement |
