- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,602
In-stock
|
Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 4.8 A | 55 mOhms | - 1 V | 23 nC | Enhancement | ||||
|
1,391
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgss 1.8W | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.8 A | 36 mOhms | - 3 V | 24 nC | Enhancement | ||||
|
2,470
In-stock
|
Diodes Incorporated | MOSFET 30V P-CH MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | - 4.8 A | 36 mOhms | - 2 V | 10.5 nC | Enhancement | ||||
|
VIEW | Toshiba | MOSFET P-ch -40V -4.8A PS-8 | SMD/SMT | PS8-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.8 A | 54 mOhms |