- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,004
In-stock
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onsemi | MOSFET PFET 20V 3.2A 85MO | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 70 mOhms | 7.5 nC | ||||||
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7,578
In-stock
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Fairchild Semiconductor | MOSFET P-Ch PowerTrench Specified 1.8V | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 52 mOhms | Enhancement | PowerTrench | |||||
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2,235
In-stock
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Nexperia | MOSFET 30 V, P-channel Trench MOSFET | +/- 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.4 A | 100 mOhms | - 2.5 V | 11 nC | Enhancement | ||||
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GET PRICE |
216,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 2.4 A | 450 mOhms | - 4 V | 10.7 nC | Enhancement | |||
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3,144
In-stock
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Texas instruments | MOSFET Dual P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 2.4 A | 27 mOhms | - 800 mV | 2.9 nC | NexFET | |||||
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5,900
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 136 mOhms | - 1 V | 3.4 nC | Enhancement |
