- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,467
In-stock
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Fairchild Semiconductor | MOSFET -30V P-Channel PowerTrench | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.5 A | 20 mOhms | Enhancement | PowerTrench | ||||||
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2,465
In-stock
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Fairchild Semiconductor | MOSFET -30V P-CH PwrTrench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.5 A | 20 mOhms | |||||||||
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4,830
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh FET 25Vgss -100A 1.3W | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 1.5 V | 47.5 nC | Enhancement | |||||
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3,930
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 DI5060-8 T&R 2.5K | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 2.5 V | 47.5 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.5 A | 29 mOhms | |||||||||||
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225,001
In-stock
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Fairchild Semiconductor | MOSFET -30V P-CH PwrTrench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | 1 Channel | Si | P-Channel | - 30 V | - 8.5 A | 20 mOhms |