- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,937
In-stock
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Diodes Incorporated | MOSFET 60V P-Channel 6.8A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10.4 A | 55 mOhms | - 1 V | 44 nC | Enhancement | |||
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4,294
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 25Mgs 2207pF 21.6nC | 25 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10.4 A | 15 Ohms | - 3 V | 42.7 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET 30V P-Ch Enh FET 25Mgs 2207pF 21.6nC | 25 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10.4 A | 15 Ohms | - 3 V | 42.7 nC | Enhancement |
