- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
5,962
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 12 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 0.08 Ohms | - 1.5 V | 5.5 nC | Enhancement | TrenchFET | |||
|
|
9,001
In-stock
|
Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 75 mOhms | Enhancement | ||||||
|
|
63,140
In-stock
|
onsemi | MOSFET -20V -3.2A P-Channel | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 112 mOhms | Enhancement | ||||||
|
|
2,660
In-stock
|
Nexperia | MOSFET 12V P-channel Trench MOSFET | 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.2 A | 59 mOhms | - 1 V | 12 nC | Enhancement | ||||
|
|
4,373
In-stock
|
onsemi | MOSFET PFET SOT23 20V 3.2A 85MO | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 112 mOhms | - 0.72 V | 7.5 nC | |||||
|
|
2,218
In-stock
|
Nexperia | MOSFET 20V Single P-channel Trench MOSFET | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 80 mOhms | - 1 V | 7.5 nC | Enhancement | ||||
|
|
4,878
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 77 mOhms | - 900 mV | 5 nC | Enhancement | ||||
|
|
130
In-stock
|
Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 3.2 A | 190 mOhms | - 1 V | 17.7 nC | Enhancement | ||||
|
|
80
In-stock
|
onsemi | MOSFET 20V 4.2A 60MOHM PFET | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 55 mOhms | - 1.2 V | 10 nC | Enhancement | ||||
|
|
6,530
In-stock
|
Texas instruments | MOSFET 20V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 t... | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 29.7 mOhms | - 1.3 V | 3.5 nC | Enhancement | PicoStar | |||
|
|
1,141
In-stock
|
Texas instruments | MOSFET PCh NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 33 mOhms | - 800 mV | 3.4 nC | NexFET | ||||
|
|
960
In-stock
|
Texas instruments | MOSFET 20V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 t... | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 29.7 mOhms | - 1.3 V | 3.5 nC | Enhancement | PicoStar |
