- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
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- EMH-8 (2)
- H2PAK-2 (1)
- Power-56-8 (1)
- SC-59-3 (1)
- SO-8 (5)
- SOIC-8 (3)
- SOP-8 (2)
- SOT-223-3 (4)
- SOT-23-3 (3)
- SOT-26-6 (5)
- TO-220-3 (25)
- TO-220FP-3 (13)
- TO-236-3 (1)
- TO-247-3 (15)
- TO-251-3 (2)
- TO-252-3 (23)
- TO-262-3 (1)
- TO-263-3 (11)
- TO-268-3 (2)
- TO-281-3 (2)
- TO-3PF-3 (1)
- TO-3PN-3 (1)
- TSM-3 (1)
- TSOT-26-6 (1)
- UMLP-6 (1)
- VS6-6 (2)
- WDFN-6 (1)
- WLCSP-4 (5)
- X1-WLB1818-4 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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- 0.024 Ohms (1)
- 0.49 Ohms (2)
- 1 Ohms (2)
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- 2.75 Ohms (3)
- 20 mOhms (2)
- 20.3 mOhms (1)
- 21 mOhms (2)
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- 850 mOhms (6)
- 90 mOhms (1)
- 900 mOhms (1)
- 910 mOhms (4)
- 950 mOhms (4)
- 980 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC (1)
- 11 nC (4)
- 11.4 nC (1)
- 13 nC (1)
- 13.4 nC (4)
- 14.6 nC (1)
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- 16.5 nC (4)
- 18 nC (1)
- 18.6 nC (1)
- 2.7 nC (1)
- 20 nC (7)
- 21.5 nC (3)
- 22 nC (11)
- 25.4 nC (1)
- 29 nC (1)
- 31 nC (1)
- 32 nC (1)
- 33 nC (4)
- 34 nC (4)
- 41 nC (5)
- 56 nC (1)
- 6.5 nC (1)
- 6.8 nC (2)
- 67 nC (1)
- 8.5 nC (1)
- 8.8 nC (1)
- 9 nC (2)
- 9.3 nC (1)
- 92 nC (3)
- 95 nC (3)
- 96 nC (3)
- Channel Mode :
- Applied Filters :
136 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||||
|
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599
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||||
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24,412
In-stock
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Vishay Semiconductors | MOSFET 20V 6A 2W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 0.024 Ohms | 0.4 V | 8.5 nC | Enhancement | TrenchFET | |||
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4,022
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 900 mOhms | Enhancement | ||||||
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1,479
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener embedded, IPAK PKG | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | |||
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981
In-stock
|
STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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479
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | ||||
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3,620
In-stock
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Fairchild Semiconductor | MOSFET 30V/16V 9.5/12MO NCH SINGLE | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6 A | 760 mOhms | Enhancement | ||||||
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GET PRICE |
27,700
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||
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615
In-stock
|
STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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33,260
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.95 Ohm 6A MDmesh K5 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | Enhancement | ||||
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421
In-stock
|
STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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1,569
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 4 V | 16.5 nC | Enhancement | ||||
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2,415
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | CoolMOS | |||
|
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106,800
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | |||||
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2,380
In-stock
|
STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | ||||||
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977
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 4 V | 21.5 nC | Enhancement | ||||
|
|
590
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 3 V | 21.5 nC | Enhancement | ||||
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1,664
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1 Ohms | 3 V | 21.5 nC | Enhancement | ||||
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1,470
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 0.8Ohm typ 6A Zener-protected | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 3 V | 16.5 nC | Enhancement | ||||
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4,980
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 40 mOhms | 1.5 V | 6.5 nC | PowerTrench | |||||
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1,820
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/400 /6A/CFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 6 A | 1.1 Ohms | Enhancement | QFET | |||||
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1,380
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6 A | 24 mOhms | Enhancement | PowerTrench | |||||
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2,221
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 6 A | 21 mOhms | PowerTrench | |||||||
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863
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.9 Ohms | Enhancement | QFET | |||||
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968
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.9 Ohms | Enhancement | QFET | |||||
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1,266
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 4.5 V | 22 nC | SuperFET II | ||||
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841
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 2.3 Ohms | Enhancement | QFET | |||||
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2,310
In-stock
|
Fairchild Semiconductor | MOSFET 500V 6A N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6 A | 760 mOhms | Enhancement | ||||||
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1,134
In-stock
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STMicroelectronics | MOSFET N-Ch 42V 6A OmniFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 40 V | 6 A | 60 mOhms |
