- Vgs - Gate-Source Voltage :
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28 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
182,100
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 24 mOhms | 70 nC | Enhancement | ||||
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2,941
In-stock
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Fairchild Semiconductor | MOSFET 40V 65A N-Chnl Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 5.6 mOhms | 2 V | 41 nC | Enhancement | PowerTrench | |||
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1,119
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 65 A | 16 mOhms | Enhancement | ||||||
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1,521
In-stock
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Fairchild Semiconductor | MOSFET TO-220 N-CH 60V 65A | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 65 A | 16 mOhms | Enhancement | QFET | |||||
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2,154
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 11.8 mOhms | 8.5 nC | ||||||||
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3,261
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 12.5 mOhms | 10 nC | Enhancement | |||||
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3,200
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V | 22 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 6 mOhms | 1.8 V | 8 nC | |||||
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3,519
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 65A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 6 mOhms | Enhancement | ||||||
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1,335
In-stock
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Fairchild Semiconductor | MOSFET 60V 65A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 65 A | 10.8 mOhms | 2 V | 36 nC | Enhancement | PowerTrench | |||
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1,382
In-stock
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Fairchild Semiconductor | MOSFET MV7 N Channel Power Trench MosFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 15.5 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||
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688
In-stock
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Fairchild Semiconductor | MOSFET 120V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 65 A | 9.6 mOhms | 4 V | 32 nC | PowerTrench | ||||
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140
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 65A 25mOhm 70nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 25 mOhms | 70 nC | Enhancement | |||||
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186
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 32 mOhms | Enhancement | QFET | |||||
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670
In-stock
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STMicroelectronics | MOSFET N-Ch, 100V-0.015ohms 60A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 65 A | 15 mOhms | Enhancement | ||||||
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1,707
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 12.5 mOhms | 10 nC | Enhancement | |||||
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2,110
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 65A 10mOhm 10nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 10 mOhms | 1 V | 14 nC | |||||||
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1,220
In-stock
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onsemi | MOSFET NFET SO8FL 30V 65A 5MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 3.4 mOhms | 1.6 V | 30.5 nC | |||||
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20
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 65 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | |||
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590
In-stock
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STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ.... | - 10 V to + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 65 A | 52 mOhms | 1.8 V | 122 nC | Enhancement | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 65 A | 4.2 mOhms | 4.5 V | 117 nC | Enhancement | ||||
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450
In-stock
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Fairchild Semiconductor | MOSFET SuperFET3 650V 40 mOhm | +/- 30 V | Through Hole | TO-247-3 | - 55 | + 150 C | Tube | 1 Channel | N-Channel | 650 V | 65 A | 35.4 mOhms | 2.5 V | 136 nC | Enhancement | |||||
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1,999
In-stock
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Toshiba | MOSFET UMOSVIII 40V 4.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 3.3 mOhms | 2.5 V | 39 nC | Enhancement | ||||
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150
In-stock
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Toshiba | MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 65 A | 4 mOhms | 2 V to 4 V | 81 nC | Enhancement | |||||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 14 mOhms | 1 V | 34 nC | Enhancement | ||||
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10,000
In-stock
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onsemi | MOSFET NFET SO8FL 30V 65A 5MOHM | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 3.4 mOhms | ||||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 65A 40V 88W 2800pF 0.0045 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 4.5 mOhms | ||||||||||
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12
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 11.8 mOhms | 8.5 nC | ||||||||
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18
In-stock
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IR / Infineon | MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 11.8 mOhms | 8.5 nC |
