- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Pd - Power Dissipation :
- Rds On - Drain-Source Resistance :
-
- 0.0011 Ohms (1)
- 0.0014 Ohms (3)
- 0.0015 Ohms (1)
- 0.0016 Ohms (1)
- 0.0028 Ohms (2)
- 0.003 Ohms (3)
- 0.00378 Ohms (1)
- 0.0045 Ohms (1)
- 0.0079 Ohms (2)
- 1.2 mOhms (4)
- 1.21 mOhms (1)
- 1.3 mOhms (1)
- 1.4 mOhms (1)
- 1.5 mOhms (4)
- 1.58 mOhms (2)
- 1.6 mOhms (2)
- 1.7 mOhms (3)
- 1.8 mOhms (6)
- 1.88 mOhms (2)
- 1.9 mOhms (3)
- 10.5 mOhms (2)
- 16 mOhms (4)
- 17 mOhms (3)
- 2 mOhms (4)
- 2.1 mOhms (6)
- 2.15 mOhms (1)
- 2.3 mOhms (10)
- 2.4 mOhms (8)
- 2.5 mOhms (5)
- 2.6 mOhms (2)
- 2.7 mOhms (2)
- 2.8 mOhms (3)
- 2.9 mOhms (1)
- 20 mOhms (2)
- 22 mOhms (6)
- 23 mOhms (2)
- 24 mOhms (7)
- 27 mOhms (2)
- 3 mOhms (2)
- 3.1 mOhms (1)
- 3.2 mOhms (6)
- 3.4 mOhms (1)
- 3.5 mOhms (5)
- 3.7 mOhms (6)
- 3.8 mOhms (3)
- 3.9 mOhms (1)
- 4 mOhms (4)
- 4.2 mOhms (4)
- 4.4 mOhms (1)
- 4.5 mOhms (2)
- 4.6 mOhms (5)
- 42 mOhms (1)
- 43 mOhms (1)
- 5 mOhms (1)
- 5.3 mOhms (1)
- 5.5 mOhms (5)
- 5.7 mOhms (2)
- 5.8 mOhms (1)
- 6 mOhms (2)
- 6.1 mOhms (2)
- 6.3 mOhms (1)
- 7.5 mOhms (2)
- 7.7 mOhms (2)
- 8 mOhms (2)
- 9 mOhms (1)
- 9.6 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (2)
- 107 nC (5)
- 112 nC (2)
- 114.6 nC (2)
- 120 nC (3)
- 124 nC (3)
- 130 nC (2)
- 131 nC (1)
- 133 nC (2)
- 134 nC (4)
- 135 nC (2)
- 145 nC (1)
- 150 nC (4)
- 152 nC (4)
- 160 nC (1)
- 165 nC (3)
- 166 nC (2)
- 167 nC (1)
- 180 nC (3)
- 181 nC (1)
- 183 nC (2)
- 185 nC (2)
- 190 nC (3)
- 192 nC (1)
- 200 nC (1)
- 206 nC (6)
- 21 nC (3)
- 210 nC (4)
- 211 nC (5)
- 223 nC (4)
- 225 nC (2)
- 228 nC (1)
- 230 nC (3)
- 235 nC (1)
- 250 nC (2)
- 265 nC (2)
- 270 nC (4)
- 285 nC (1)
- 290 nC (1)
- 31 nC (1)
- 310 nC (1)
- 330 nC (2)
- 340 nC (1)
- 346 nC (2)
- 377 nC (1)
- 41 nC (1)
- 42 nC (1)
- 53 nC (2)
- 54 nC (1)
- 57 nC (1)
- 58 nC (1)
- 65 nC (2)
- 65.4 nC (1)
- 68 nC (4)
- 69 nC (1)
- 78 nC (1)
- 79 nC (3)
- 87 nC (2)
- 88 nC (1)
- 93.3 nC (1)
- 99 nC (2)
- Package :
- Applied Filters :
180 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
45,200
In-stock
|
Nexperia | MOSFET PSMN1R5-30BLE/SOT404/D2PAK | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 401 W | N-Channel | 30 V | 120 A | 1.3 mOhms | 1.7 V | 228 nC | D2PAK-3 (TO-263-3) | 800 | Green available | |||||||||
|
|
4,360
In-stock
|
IXYS | MOSFET MSFT N-CH ULTRA JNCT X2 3&44 | - 30 V, + 30 V | Through Hole | Tube | 1.25 mW | N-Channel | 650 V | 120 A | 23 mOhms | 3 V | 230 nC | TO-247 | 25 | Green available | ||||||||||
|
|
1,464
In-stock
|
STMicroelectronics | MOSFET N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power M... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 2.15 mOhms | 1 V | 53 nC | Enhancement | |||||||||
|
|
6,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | ||||||||
|
|
GET PRICE |
14,370
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 120Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 10.5 mOhms | Enhancement | |||||||||
|
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760
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 57 nC | |||||||||||
|
|
2,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||||||
|
|
523
In-stock
|
Fairchild Semiconductor | MOSFET 75V, 210A NCH MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 75 V | 120 A | 5.5 mOhms | UniFET | ||||||||||||||
|
|
19,680
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||||||
|
|
657
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.1 mOhms | 2.3 V | 206 nC | Enhancement | OptiMOS | |||||||
|
|
5,889
In-stock
|
STMicroelectronics | MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | 1 V to 2.5 V | 42 nC | Enhancement | |||||||||
|
|
637
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | ||||||||
|
|
633
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||||||
|
|
1,021
In-stock
|
STMicroelectronics | MOSFET N-Ch 40 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 4.6 mOhms | Enhancement | ||||||||||
|
|
1,809
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | Enhancement | OptiMOS | |||||||||
|
|
1,062
In-stock
|
Vishay Semiconductors | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0028 Ohms | 1.5 V | 330 nC | Enhancement | TrenchFET | |||||||
|
|
432
In-stock
|
IXYS | MOSFET MOSFET 650V/120A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 120 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | ||||||||
|
|
932
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | 2.3 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 2 mOhms | 3.8 V | 206 nC | OptiMOS | ||||||||
|
|
910
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | 20 V | SMD/SMT | H2PAK-2 | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 4.5 mOhms | 4 V | 114.6 nC | |||||||||||
|
|
1,374
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 2.2 V | 112 nC | Enhancement | ||||||||
|
|
816
In-stock
|
STMicroelectronics | MOSFET 75V 3.5mOhm N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 4 mOhms | Enhancement | ||||||||||
|
|
1,090
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | 2.2 V | 133 nC | Enhancement | ||||||||
|
|
1,910
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | |||||||
|
|
3,000
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 193A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | |||||||
|
|
649
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | ||||||||
|
|
2,015
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.4 mOhms | 2.2 V | 69 nC | Enhancement | ||||||||
|
|
9,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||||||
|
|
559
In-stock
|
Fairchild Semiconductor | MOSFET Smart Power Module | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 5.3 mOhms | 4.5 V | 65.4 nC | Enhancement | ||||||||
|
|
435
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 54 nC | Enhancement | ||||||||
|
|
800
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-CHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | PowerTrench |
