- Mounting Style :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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15,003
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 3.6A 56mOhm 2.6nC Qg | 16 V | SMD/SMT | SOT-23-3 | Reel | Si | N-Channel | 40 V | 3.6 A | 78 mOhms | 2.6 nC | |||||||||
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2,138
In-stock
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Fairchild Semiconductor | MOSFET N-CH 200V 18A Q-FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.6 A | 130 mOhms | Enhancement | PowerTrench | |||||
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6,421
In-stock
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IR / Infineon | MOSFET 80V DUAL N-CH HEXFET 73mOhm VGS 10V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 15 nC | Enhancement | |||||
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9,535
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.8nC | 12 V | SMD/SMT | PQFN-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 3.6 A | 63 mOhms | 2.8 nC | ||||||||
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4,059
In-stock
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IR / Infineon | MOSFET MOSFT 150V 3.6A 90mOhm 28nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 150 V | 3.6 A | 90 mOhms | 28 nC | ||||||||
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1,903
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 80V 3.6A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 4 V | 15 nC | |||||
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828
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.6 A | 77 mOhms | 1.5 V | 10 nC | Enhancement | ||||
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5,913
In-stock
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onsemi | MOSFET 20 V SANYO T6 NCH IN | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.6 A | 18 mOhms | 450 mV | 17.8 nC | Enhancement | ||||
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4,042
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.6 A | 25 mOhms | 1 V | 11.2 nC | Enhancement | ||||
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1,584
In-stock
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IR / Infineon | MOSFET 500V 3.5A 2.2Ohm MotIRFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.85 Ohms | 20 nC | |||||||
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1,379
In-stock
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IR / Infineon | MOSFET Gen 10.7 FredFet 500V 1.5Ohm | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.75 Ohms | 13.3 nC | ||||||||
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9,955
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.6 A | 25 mOhms | 1 V | 11.2 nC | Enhancement | ||||
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280
In-stock
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IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
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157
In-stock
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IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
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2,020
In-stock
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Texas instruments | MOSFET 12V N-Channel FemtoFETGäó MOSFET 3-PI... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.6 A | 63 mOhms | 550 mV | 1.2 nC | Enhancement | ||||
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150
In-stock
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Texas instruments | MOSFET 12V N-Channel FemtoFETGäó MOSFET 3-PI... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.6 A | 63 mOhms | 550 mV | 1.2 nC | Enhancement | ||||
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4,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.6 A | 180 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 3.6 Amps 800V 3.6 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.6 A | 3.6 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 3.6 Amps 800V 3.6 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.6 A | 3.6 Ohms | Enhancement | HyperFET | |||||
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2,128
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement | ||||
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355
In-stock
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IR / Infineon | MOSFET 500V 3.6A 1.85 Ohm 75ns HEXFET ZeroSMPS | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.85 Ohms | 20 nC | |||||||
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1,564
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement |
