- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
28 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,591
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 86 A | 5.5 mOhms | 36 nC | Enhancement | Directfet | ||||
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3,975
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 86 A | 4.3 mOhms | 2 V | 37 nC | Enhancement | ||||
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41,770
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 8 mOhms | 1.35 V to 2.35 V | 15 nC | Enhancement | ||||
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137,500
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 86A 8mOhm 40nC Log LvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | ||||||||
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2,693
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 86A 6.5mOhm 17nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 6.5 mOhms | 2.25 V | 26 nC | |||||||
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815
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 150V 86A D2PAK | 30 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 86 A | 11.7 mOhms | 3 V | 71 nC | Enhancement | ||||
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1,211
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8 mOhms | 15 nC | ||||||||
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300
In-stock
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IR / Infineon | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 86 A | 8 mOhms | 3 V | 60 nC | |||||||
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1,720
In-stock
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IR / Infineon | MOSFET MOSFT 85A 5.8mOhm 30V 15nC Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 5.8 mOhms | 2.35 V | 15 nC | |||||||
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165
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 86 A | 4.3 mOhms | 2 V | 37 nC | Enhancement | OptiMOS | |||
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75
In-stock
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IXYS | MOSFET Trench HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | |||
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585
In-stock
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IR / Infineon | MOSFET 55V, 86A, 12mOhm Auto Lgc Lvl MOSFET | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 6.5 mOhms | Enhancement | ||||||
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20
In-stock
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IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHV, HiPerFET | |||
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312
In-stock
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IR / Infineon | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 86 A | 2.7 mOhms | 4 V | 130 nC | Enhancement | StrongIRFET | ||||
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540
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | ||||||
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177
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 6.5 mOhms | 2.25 V | 17 nC | Enhancement | ||||
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9
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 300V 86A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | ||||
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23
In-stock
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IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | |||||
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2,000
In-stock
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Vishay Semiconductors | MOSFET 100V Vds 86A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 86 A | 7.2 mOhms | 1.5 V | 65 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 200 V | 86 A | 29 Ohms | |||||||||||
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VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | ||||
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2,997
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 6.5 mOhms | 2.25 V | 17 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 86 A | 29 mOhms | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | ||||||
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866
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8.2 mOhms | 1.35 V to 2.35 V | 17 nC | Enhancement | ||||
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566
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 8mOhms 40nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 1 V to 3 V | 40 nC | Enhancement | ||||
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332
In-stock
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IR / Infineon | MOSFET MOSFT 30V 86A 6.5mOhm 17nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8.2 mOhms | 17 nC |
