- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
354
In-stock
|
IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-263HV | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | ||||
|
|
29
In-stock
|
IXYS | MOSFET 2500V 1A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 1 A | 40 Ohms | 2 V to 4 V | 41 nC | Enhancement | |||
|
|
54
In-stock
|
IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-247 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | ||||
|
|
31
In-stock
|
IXYS | MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 1.5 A | 40 Ohms | 2 V | 41 nC | Enhancement | |||
|
|
57
In-stock
|
IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-247HV | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | ||||
|
|
379
In-stock
|
IXYS | MOSFET 1 Amps 2500V 40 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 1.5 A | 40 Ohms | Enhancement | |||||
|
|
VIEW | IXYS | MOSFET SMPD MOSFETs | SMD/SMT | ISOPLUS-SMPD-9 | Bulk | Si | N-Channel | 600 V | 50 A | 40 Ohms |
