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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPD30N03S4L-14
1+
$0.580
10+
$0.478
100+
$0.291
1000+
$0.225
2500+
$0.192
RFQ
4,626
In-stock
Infineon Technologies MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 16 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 30 A 13.6 mOhms     Enhancement OptiMOS
IRFZ46ZSTRLPBF
3200+
$0.557
6400+
$0.546
9600+
$0.536
22400+
$0.505
VIEW
RFQ
Infineon Technologies MOSFET MOSFT 55V 51A 13.6mOhm 31nC   SMD/SMT TO-263-3   + 175 C Reel 1 Channel Si N-Channel 55 V 51 A 13.6 mOhms 4 V 46 nC    
IRFZ46ZSPBF
1+
$1.660
10+
$1.410
100+
$1.130
500+
$0.992
RFQ
1,960
In-stock
IR / Infineon MOSFET 55V SINGLE N-CH 13.6mOhms 31nC 20 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 51 A 13.6 mOhms 4 V 31 nC Enhancement  
IPP139N08N3 G
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 80V 45A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 45 A 13.6 mOhms 2.8 V 19 nC Enhancement OptiMOS
IPB136N08N3 G
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 80V 45A D2PAK-2 OptiMOS 3 20 V   TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 45 A 13.6 mOhms     Enhancement OptiMOS
IPP139N08N3GHKSA1
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 80V 45A TO220-3   Through Hole TO-220-3     Tube 1 Channel Si N-Channel 80 V 45 A 13.6 mOhms       CoolMOS
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