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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,865
In-stock
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IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 22 nC | ||||||||
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2,409
In-stock
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IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 4 V | 22 nC | Enhancement | |||
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905
In-stock
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IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 22 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 4 V | 22 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 22 nC | ||||||||
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VIEW | IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 4 V | 22 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 4 V | 22 nC | Enhancement |
