- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
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16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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23,565
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.9 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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5,529
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.9 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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2,060
In-stock
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Infineon Technologies | MOSFET 100V 64A 14.5mOhm HEXFET 140W 50nC | 20 V | Through Hole | TO-251-3 | Tube | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 14 nC | StrongIRFET | ||||||||
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1,816
In-stock
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Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
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2,216
In-stock
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IR / Infineon | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 54 nC | Enhancement | StrongIRFET | |||||
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1,355
In-stock
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Infineon Technologies | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 87 nC | StrongIRFET | |||||||
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587
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | ||||||||
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1,323
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | ||||||||
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720
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | Enhancement | ||||||
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20
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.9mOhm 29nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | ||||||||
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20,108
In-stock
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Toshiba | MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A | +/- 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 13.9 mOhms | - 1 V | 19.5 nC | Enhancement | |||||
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6,000
In-stock
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Infineon Technologies | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 3 V | 54 nC | Enhancement | StrongIRFET | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 13.9 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | Enhancement | ||||||
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VIEW | Toshiba | MOSFET N-ch 30V 12A SOP-8 | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 13.9 mOhms | ||||||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 13.9 mOhms | Enhancement |
