- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DFN-5x6-8 (3)
- PQFN-6 (1)
- SO-8 (7)
- SOT-223-4 (3)
- SOT-227-4 (3)
- SOT-23-3 (3)
- SOT-26-6 (2)
- SSOT-3 (1)
- SSOT-6 (3)
- T-MAX-3 (2)
- TDSON-8 (1)
- TO-220-3 (2)
- TO-247-3 (8)
- TO-247-4 (1)
- TO-251-3 (2)
- TO-252-3 (17)
- TO-263-3 (3)
- TO-263-7 (1)
- TO-264-3 (4)
- TO-268-3 (1)
- TO-3P-3 (1)
- TO-3PN-3 (3)
- TSOP-6 (2)
- U-WLB1010-4 (1)
- X2-DFN2015-3 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 13 A (1)
- - 2 A (1)
- - 2.2 A (1)
- - 2.5 A (1)
- - 24 A (2)
- - 27.5 A (1)
- - 28 A (1)
- - 3.1 A (1)
- - 3.3 A (1)
- - 3.7 A (1)
- - 3.8 A (2)
- - 31 A (6)
- - 4 A (3)
- - 44 A (3)
- - 5 A (1)
- - 5.3 A (1)
- - 5.8 A (1)
- 12 A (3)
- 17 A (3)
- 2.2 A (1)
- 20 A (1)
- 22 A (3)
- 23 A (2)
- 28 A (3)
- 3.8 A (1)
- 30 A (1)
- 35 A (2)
- 38.8 A (1)
- 4.4 A (1)
- 4.6 A (1)
- 4.7 A (4)
- 40 A (1)
- 48 A (1)
- 49 A (1)
- 5.1 A (1)
- 5.4 A (1)
- 50 A (3)
- 52 A (1)
- 63 A (1)
- 65 A (1)
- 66 A (3)
- 80 A (4)
- 84 A (3)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
76 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,348
In-stock
|
Infineon Technologies | MOSFET 55V DUAL N / P CH 20V VGS 55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | Enhancement | |||||
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5,462
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 28 A | 65 mOhms | 42 nC | Enhancement | |||||
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4,413
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 42 nC | Enhancement | ||||
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373
In-stock
|
Fairchild Semiconductor | MOSFET 600V, 52A, 72mOhm N-Channel Mosfet | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 65 mOhms | 165 nC | Enhancement | SuperFET II FRFET | ||||
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3,275
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 15 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 65 mOhms | Enhancement | ||||||
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2,780
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 55 V | 5.1 A | 65 mOhms | 29 nC | Enhancement | ||||||
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2,695
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 3.8mOhms | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | ||||||||
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5,591
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 65 mOhms | Enhancement | ||||||
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180
In-stock
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IXYS | MOSFET 500V 80A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | Enhancement | HyperFET | |||||
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574
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 650 V, 0.051 Ohm typ., 50 A MDmes... | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 48 A | 65 mOhms | 4 V | 88 nC | Enhancement | |||||
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3,694
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -20V | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 65 mOhms | Enhancement | PowerTrench | |||||
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4,956
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl | 16 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 3.8 A | 65 mOhms | 32 nC | ||||||||
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3,533
In-stock
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IR / Infineon | MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | Enhancement | |||||
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2,965
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -28A 65mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | 42 nC | Enhancement | |||||
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5,080
In-stock
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IR / Infineon | MOSFET MOSFT 55V 24A 40mOhm 16.7nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 16.7 nC | ||||||||
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1,734
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | 42 nC | Enhancement | ||||||
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27,320
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 65 mOhms | 10 nC | Enhancement | |||||
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41
In-stock
|
IXYS | MOSFET 500V 80A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 66 A | 65 mOhms | Enhancement | HyperFET | |||||
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1,643
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 65 mOhms | 10 nC | Enhancement | ||||||
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54
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | 200 nC | HyperFET | |||||||
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6,775
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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4,246
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 65 mOhms | 8 nC | ||||||||
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1,329
In-stock
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Fairchild Semiconductor | MOSFET SSOT6 SINGLE PCH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 65 mOhms | Enhancement | PowerTrench | |||||
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2,711
In-stock
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onsemi | MOSFET 20V 2A P-Channel | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 65 mOhms | Enhancement | ||||||
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3,075
In-stock
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Fairchild Semiconductor | MOSFET P-CHANNEL 2.5V PowerTrench MOS | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 65 mOhms | Enhancement | PowerTrench | |||||
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2,380
In-stock
|
Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 65 mOhms | - 2.1 V | 10.1 nC | Enhancement | ||||
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12,549
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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3,400
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 42 nC | |||||
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|
2,478
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 1 V to 2 V | 16.7 nC | Enhancement | ||||
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1,277
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 16.7 nC | Enhancement |
