- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,321
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 24 A | 175 mOhms | Enhancement | UniFET | |||||
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2,479
In-stock
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Fairchild Semiconductor | MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.8 A | 175 mOhms | 2.8 V | 3.61 nC | PowerTrench | |||||
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2,881
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | StrongIRFET | |||||||
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2,368
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.6 A | 175 mOhms | Enhancement | QFET | |||||
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266
In-stock
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Fairchild Semiconductor | MOSFET 500V 28A N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 175 mOhms | Enhancement | UniFET | |||||
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2,505
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | ||||||
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854
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 11.4 A | 175 mOhms | Enhancement | QFET | |||||
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GET PRICE |
159,300
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | |||||||
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27,770
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | ||||||||
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5,500
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | - 4 V | 12.7 nC | |||||
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1,013
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 49A 17.5mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 49 A | 175 mOhms | 42 nC | ||||||||
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4,830
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23,3K | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 175 mOhms | 1.6 nC | Enhancement | |||||
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973
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | 12.7 nC | ||||||||
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1,597
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V 11A 175mOhm 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC | |||||
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16,087
In-stock
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Texas instruments | MOSFET 12V P-CH FemtoFET MOSFET | - 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.3 A | 175 mOhms | - 950 mV | 1.14 nC | NexFET | ||||
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4,517
In-stock
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Texas instruments | MOSFET 12V,P-Ch FemtoFET MOSFET | - 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.3 A | 175 mOhms | - 950 mV | 1.14 nC | |||||
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2,980
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | ||||||
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852
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 175 mOhms | 3 V | 29 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2A 3Pin | 8 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 175 mOhms | Enhancement | ||||||
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1,830
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement |
