- Manufacture :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,739
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 10.4 mOhms | 79.5 nC | |||||
|
|
2,594
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 74A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 74 A | 10.4 mOhms | 2.2 V | 24 nC | Enhancement | |||
|
|
390
In-stock
|
Toshiba | MOSFET 100V N-Ch PWR FET 60A 67W 23nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 60 A | 10.4 mOhms | 23 nC | ||||||||
|
|
2,098
In-stock
|
Toshiba | MOSFET N-Ch DTMOS VII-H 1.9W 630pF 15A 30V | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 10.4 mOhms | 2.3 V | 9.8 nC | Enhancement | |||
|
|
VIEW | Toshiba | MOSFET P-Ch -30V FET 30W -23A 3240pF 76nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 23 A | 10.4 mOhms | 76 nC |
