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52 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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72,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 3 mOhm typ 130 A STripFET F7 Power MOS... | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 125 W | N-Channel | 60 V | 130 A | 3.5 mOhms | 2 V | PowerFLAT-5x6-8 | 3000 | Green available | |||||||||||
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7,873
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 3.5 mOhms | 2 V | 200 nC | Enhancement | ||||||||
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4,876
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.5 mOhms | - 4 V | 154 nC | Enhancement | OptiMOS | |||||||
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1,553
In-stock
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Fairchild Semiconductor | MOSFET PWM PFC COMBO | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 3.5 mOhms | PowerTrench | ||||||||||
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1,540
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | |||||||||
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2,665
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.5 mOhms | - 4 V | 154 nC | Enhancement | ||||||||
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11,481
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 3.5 mOhms | 2 V | 16 nC | Enhancement | OptiMOS | |||||||
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2,775
In-stock
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Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | |||||||
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4,713
In-stock
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IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 116 A | 3.5 mOhms | 3.7 V | 120 nC | StrongIRFET | ||||||||
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5,110
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | Enhancement | OptiMOS | |||||||||
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2,190
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 3.5 mOhms | Enhancement | PowerTrench SyncFET | |||||||||
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1,198
In-stock
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Fairchild Semiconductor | MOSFET 25V NChan Dual Cool PowerTrench SyncFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 24 A | 3.5 mOhms | 1.7 V | 31 nC | PowerTrench SyncFET | ||||||||
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298
In-stock
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Fairchild Semiconductor | MOSFET 60V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 3.5 mOhms | 2 V | 173 nC | Enhancement | ||||||||
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1,145
In-stock
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IR / Infineon | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 3.5 mOhms | 4 V | 160 nC | |||||||||
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786
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.5 mOhms | OptiMOS | ||||||||||
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579
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.5 mOhms | 2.2 V | 112 nC | Enhancement | ||||||||
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863
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 270 nC | Enhancement | StrongIRFET | |||||||||
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494
In-stock
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Fairchild Semiconductor | MOSFET N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 3.5 mOhms | 2 V | 23.5 nC | Enhancement | PowerTrench | |||||||
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395
In-stock
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Fairchild Semiconductor | MOSFET N-CH PowerTrench N-Ch PowerTrench Mos | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | |||||||||
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116
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | |||||||||
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624
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 3.5 mOhms | 158 nC | OptiMOS | |||||||||
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1,389
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | |||||||
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647
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 3.5 mOhms | OptiMOS | |||||||||||||
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9,900
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC | 12 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | 0.8 V | 41 nC | |||||||||
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183
In-stock
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IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 3.5 mOhms | Enhancement | ||||||||||
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394
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET | |||||||
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110
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.5 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||||||
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678
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.5 mOhms | 2 V | 56 nC | Enhancement | ||||||||
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1,274
In-stock
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onsemi | MOSFET NFET U8FL 30V 64A 5.2MOHM | SMD/SMT | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 3.5 mOhms | ||||||||||||||
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380
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 180 nC | StrongIRFET |
